KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Access type: UnknownAuthor: search.filters.author.Hongsingthong, Aswin

Search Results

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    A novel power output model for photovoltaic system
    (2017-10-19)
    Kittisontirak, Songkiate
    ;
    Dawan, Promphak
    ;
    Atiwongsangthong, Narin
    ;
    Titiroongruang, Wisut
    ;
    Chinnavornrungsee, Perawut
    This paper proposed the novel concept model for forecasting the PV power output. The model was used two meteorology to input model which are solar irradiance and module temperature. This model was improve the accuracy of model from simplified model is 1D5P by using the weight function. The proposed model was verified by comparison with measured data. The results showed that the model has high accuracy. The RMSE ranges from 0.02 to 0.07 and average RMSE is 0.04.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence
    (2013-11-01)
    Sriprapha, Kobsak
    ;
    Hongsingthong, Aswin
    ;
    Krajangsang, Taweewat
    ;
    Inthisang, Sorapong
    ;
    Jaroensathainchok, Suttinan
    Hydrogenated amorphous silicon oxide (a-SiO:H)/hydrogenated amorphous silicon (a-Si:H) double-junction solar cells with a high open-circuit voltage (V<inf>oc</inf>) and a low temperature coefficient (TC) were developed using a wide bandgap a-SiO:H film as the intrinsic (i) layer of the top cell. It was found that with an increasing carbon dioxide (CO<inf>2</inf>)/silane (SiH <inf>4</inf>) ratio, the optical bandgap (E<inf>opt</inf>) of the a-SiO:H films increased remarkably while the photogain tended to decrease. By employing an optimized a-SiO:H film as the i top layer of the a-SiO:H/a-Si:H solar cell, an initial conversion efficiency (η) of 10.2% was obtained. This solar cell showed a higher η than the conventional a-Si:H/a-Si:H structure, a result of incremental improvements in the V<inf>oc</inf> and short-circuit current density (J<inf>sc</inf>), which were attributed to the wider bandgap of the intrinsic top layer. It was found that the TC for η of the a-SiO:H/a-Si:H solar cell was -0.10%/°C, slightly lower than that of the a-Si:H/a-Si:H solar cell, whose TC value is about -0.15%/°C. The light-induced degradation (LID) ratio for η of the a-SiO:H/a-Si:H solar cell was approximately 19%, which was 2% lower than that of the a-Si:H/a-Si:H solar cell. These results have demonstrated the great potential of the i-a-SiO:H films as absorber layers of top cells in multi-junction silicon-based thin-film solar cells. The a-SiO:H/a-Si:H solar cells with low TCs and low LID ratios are attractive for their potential use in high-temperature environments or tropical regions. © 2013 Elsevier B.V.