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    Intermediate matching layer for light-induced performance and removable clip-on applications of four-terminal perovskite/silicon heterojunction tandem solar cells
    (2023-05-01)
    Sanglee, Kanyanee
    ;
    Sakunkaewkasem, Siwakorn
    ;
    Piromjit, Channarong
    ;
    Nukunudompanich, Methawee
    ;
    Kanjanaboos, Pongsakorn
    Perovskite/silicon tandem solar cells are one of the most efficient ways to improve the performance of the photovoltaic industry and should be viewed as a promising path in the photovoltaic field. The silicon photovoltaic modules have a lifespan of over 20 years, while the low device stability of perovskite solar cells (PSCs) remains a significant commercialization barrier. An air gap acts as an optical spacer layer for four terminal (4T) perovskite/silicon tandem cells, resulting in a loss of efficiency. Using polydimethylsiloxane (PDMS) as an intermediate matching layer (IML) and a clip-on design made of a PDMS-based material sandwiched between polyvinyl chloride (PVC) layers with the configuration of PVC/IML/PVC, this research not only achieved efficiency improvement of four-contact tandem solar cells but also greatly simplified disassembly of individual cells. The 4T perovskite/silicon heterojunction tandem cells with a clip-on design achieved the highest efficiency of 23.49% for the active area of 1 cm<sup>2</sup>, while the fully tandem configuration without a clip-on layer only exhibited a PCE of 22.83%. The clip-on technology has the potential to boost the current density of silicon heterojunction solar cells from 15.01 mA/cm<sup>2</sup> (for the filtered bottom cell with an air gap) up to 16.51 mA/cm<sup>2</sup> (for the filtered bottom cell with a clip-on). Therefore, this state-of-the-art allows for the removal of PSCs with a shorter lifespan while adhering two photovoltaic cells together securely and effectively.
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    Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence
    (2013-11-01)
    Sriprapha, Kobsak
    ;
    Hongsingthong, Aswin
    ;
    Krajangsang, Taweewat
    ;
    Inthisang, Sorapong
    ;
    Jaroensathainchok, Suttinan
    Hydrogenated amorphous silicon oxide (a-SiO:H)/hydrogenated amorphous silicon (a-Si:H) double-junction solar cells with a high open-circuit voltage (V<inf>oc</inf>) and a low temperature coefficient (TC) were developed using a wide bandgap a-SiO:H film as the intrinsic (i) layer of the top cell. It was found that with an increasing carbon dioxide (CO<inf>2</inf>)/silane (SiH <inf>4</inf>) ratio, the optical bandgap (E<inf>opt</inf>) of the a-SiO:H films increased remarkably while the photogain tended to decrease. By employing an optimized a-SiO:H film as the i top layer of the a-SiO:H/a-Si:H solar cell, an initial conversion efficiency (η) of 10.2% was obtained. This solar cell showed a higher η than the conventional a-Si:H/a-Si:H structure, a result of incremental improvements in the V<inf>oc</inf> and short-circuit current density (J<inf>sc</inf>), which were attributed to the wider bandgap of the intrinsic top layer. It was found that the TC for η of the a-SiO:H/a-Si:H solar cell was -0.10%/°C, slightly lower than that of the a-Si:H/a-Si:H solar cell, whose TC value is about -0.15%/°C. The light-induced degradation (LID) ratio for η of the a-SiO:H/a-Si:H solar cell was approximately 19%, which was 2% lower than that of the a-Si:H/a-Si:H solar cell. These results have demonstrated the great potential of the i-a-SiO:H films as absorber layers of top cells in multi-junction silicon-based thin-film solar cells. The a-SiO:H/a-Si:H solar cells with low TCs and low LID ratios are attractive for their potential use in high-temperature environments or tropical regions. © 2013 Elsevier B.V.