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    Load sharing technique for coexistence LTE-FDD and LTE-TDD
    (2019-07-01)
    Thongrak, Apichata
    ;
    A-Mapat, Narongchon
    ;
    Moungnoul, Phichet
    ;
    Anunvrapong, Pramote
    Mobile network Operator is implemented coexistence LTE-TDD and LTE-FDD network, this technique used to improve the system capacity. The adjacent cell interference or ACI caused by these coexisting networks, which affected to the network performance. This paper investigates the load sharing technique to optimal the capacity of coexistence LTE network. Results show 4:6 of FDD and TDD user ratio that give maximum system throughput and comparing with power allocation and guard band technique will describe in this paper.
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    A Practical Implementation of Memristor Emulator Circuit Based on Operational Transconductance Amplifiers
    (2019-01-01)
    Thongrak, Apichata
    ;
    Sitjongsataporn, Suchada
    ;
    Khunkhao, Sanya
    ;
    Moungnoul, Phichet
    As described of electrical circuit have been considering that there are three fundamental passive twoterminal circuit elements; resistor, capacitor, and inductor respectively. In 1971, Prof. L. Chua proposed and described memristor which defines the relationship between magnetic flux and charge. This paper are purposed a memristor emulator circuit based on operational transconductance amplifiers (OTAs). The proposed circuits can be realized using commercially integrated circuits OTA, op amp as AD844, TL084, inductor, capacitor and resistors. The characteristic of memristor emulators can be examined in a practical experiment with the active and passive components. As described, the results could be demonstrated with the memristor circuit application. Furthermore, OTA is used to realize electronically tunable current conveyors emulator circuit. As a result of simulation, the decremental and incremental memristor emulator circuit is suitable for connecting in a series circuit. It was found that the frequency-dependent pinched hysteresis loop of proposed memristor emulator circuits can be updated by changing the value of capacitance and resistance, besides it increases the current gain of current conveyor. In addition to the expected results of memristor (RM), Memcapacitor (CM) and meminductor (LM) are proposed to determine in time-domain characteristics of R-L-C mode circuits. The results of experimental are discussed of phenomena studies by the memory characteristics.