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    Porous Silicon Sensing Membrane Electrode on Extended Gate Field Effect Transistor for pH Sensor
    (2023-01-01)
    Atiwongsangthong, Narin
    ;
    Ausama, Atthawit
    ;
    Buakaew, Seangrawee
    In this paper, we used porous silicon as sensing membrane electrode which were formed by using anodization etching process at room temperature. Porous silicon sensing membrane electrode will be combined working with commercial N-MOSFET which used as the extended gate field effect transistor (PS-EGFET) for pH sensor. P-Type silicon wafer was used as material substrate for prepare porous silicon sensing membrane electrode. Anodization parameters, the current density of 10 mA/cm2, with 48% hydrofluoric acid concentration and etching time of 10 minutes. The pH sensing of porous silicon EGFET were measured in pH value of 4, 7 and 10, respectively. From experiment, the porous silicon EGFET were exhibited high pH sensitivity on current mode in relationship between the drain current with pH value was $0.2929\ \mu\mathrm{A}^{1/2}/\text{pH}$, corresponding to the linearity of 99.72%. And, pH sensitivity on voltage mode in relationship between reference voltage with pH value was 34.8 mV/pH, corresponding to the linearity of 99.78%. The experiment results showed that the porous silicon was suitable sensing membrane material for pH sensor.
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    Nanoporous silicon metal-semiconductor-metal photodetector
    (2010-01-01)
    Atiwongsangthong, N.
    ;
    Niemcharoen, S.
    ;
    Titiroongruang, W.
    In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device in terms of rise time will decrease. © 2010 World Scientific Publishing Company.