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Author: search.filters.author.Atiwongsangthong, N.Has files: No

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    Item type:Publication,
    Nanoporous silicon metal-semiconductor-metal photodetector
    (2010-01-01)
    Atiwongsangthong, N.
    ;
    Niemcharoen, S.
    ;
    Titiroongruang, W.
    In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device in terms of rise time will decrease. © 2010 World Scientific Publishing Company.
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    Effect of annealing varied temperature on electrical and optical properties of indium tin oxide films at oxygen atmosphere
    (2009-10-22)
    Srithanachai, I.
    ;
    Niemcharoen, S.
    ;
    Ueamanapong, S.
    ;
    Nutaman, K.
    ;
    Atiwongsangthong, N.
    Indium tin oxide (ITO) films were deposited on non-heated glass slide which prepared by RF sputtering system at room temperature. The temperatures of annealing were varied at 200, 300, 400 and 500 Celsius, respectively. Effect of oxygen flow on properties of ITO films has been studied. The optical properties were characterized by UV-Vis spectrophotometer. Electrical properties were characterized by 4-point probe. The results show that transmittance and sheet resistance could be improved by heat treatment. We could get the minimum sheet resistance of 120 Ω/□ and over 85% of the average transmittance in visible light. ©2009 IEEE.