A micro resonating sensor is proposed for simultaneous measurement of temperature and carrier density using modified Add-drop resonator called PANDA resonator from silicon-on-insulator (SOI) material waveguide. The proposed sensor works by observing the concentration of free-carrier in silicon around room temperature yielding the sensitivity of 1×1023 m-3 C-1 with limit of detection of 10-5 C. It is found that the output intensity decreases due to the photon and thermal absorptions. It is found that the performance of the PANDA sensor is affected by the power at the first coupling region and increase in propagating lengths of PANDA sensor causes a nonlinear effect in carrier density production.
