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Author: search.filters.author.Boonyarattanakalin, KanokthipSubject: search.filters.subject.A. Grain growth

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    Item type:Publication,
    Substrate placement angle-dependent growth of Ga/F co-doped ZnO nanostructures synthesized by hydrothermal process
    (2017-08-01)
    Chongsri, Krisana
    ;
    Boonyarattanakalin, Kanokthip
    ;
    Pecharapa, Wisanu
    In this work, the effect of angle-dependent substrate placement on structural property and morphology of Ga/F co-doped ZnO nanostructures was investigated. The Ga/F co-doped ZnO (GFZO) nanostructures were grown on substrates with ZnO seeding layer placed at different tilted-angle by a hydrothermal process using Zn(NO<inf>3</inf>)<inf>2</inf>, NH<inf>4</inf>F, GaN<inf>3</inf>O<inf>9</inf> for Zn, F and Ga sources and hexamethylenetetramine as sol stabilizer. The ZnO seeding layer was pre-deposited on glass substrates by dip-coating. The GFZO nanostructures were grown on ZnO substrate at different tilted-angles from 0° to 180° with respect to horizon. The effects of tilted angle of placed substrate on morphologies and structural properties were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and UV–Vis spectroscopy. The results indicate that this growth parameter has a vital role on preferable growth direction, morphological structure and shape of the as-synthesized nanostructure products.