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Item type:Publication, Investigation on influence of seeding layer on morphological properties of ZnO-based nanostructure prepared by hydrothermal process(2018-01-01) ;Chongsri, Krisana ;Boonyarattanakalin, KanokthipPecharapa, WisanuIn this present work, bare ZnO low-dimensional structures were synthesized by hydrothermal process with crystal growth assistance using seed layers. Different seeding layer species including ZnO and Ga-doped ZnO films prepared by sol-gel dip coating were introduced onto the substrate before the hydrothermal growth of ZnO-based nanostructures. Zn(NO<inf>3</inf>)<inf>2</inf> and GaN<inf>3</inf>O<inf>9</inf> were utilized as Zn and Ga source during hydrothermal process. The influence of seeding layer types on morphological and shapes of the hydrothermally grown nanostructures have been extensively scrutinized by Field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) and optical spectroscopy. It was revealed that different morphologies and exceptional shapes in form of nanorods of ZnO-based nanostructures were obtained as different seeding layers were introduced. More detailed studies for clarification of seed layer effect on the growth of ZnO-based nanostructures are mentioned and discussed. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effects of seeding layer thickness on physical and morphological structure of Ga/F co-doped ZnO nanostructures(2017-01-01) ;Chongsri, Krisana ;Boonyarattanakalin, KanokthipPecharapa, WisanuThe effects of seed layer thickness on structural properties and morphology of Ga/F co-doped ZnO nanostructures were investigated in this work. The seed layers with various thicknesses were deposited on glass substrates by dip-coating. It is hypothesized that a certain range of seed layer thickness can significantly alter the outcomes of the morphological structure, density, and shape of the as-synthesized nanostructure products. The Ga/F co-doped ZnO nanostructures were grown on these seed layers by a hydrothermal process using Zn(NO<inf>3</inf>)<inf>2</inf>, NH<inf>4</inf>F, GaN<inf>3</inf>O<inf>9</inf> and hexamethyltetramine. The effects of seeding layer thickness on morphologies and structural properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), and UV-Vis spectroscopy. More detailed studies to clarify the seed layer effect on the growth of Ga/F co-doped ZnO nanostructures are further discussed.
