KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Author: search.filters.author.Borwornpornmetee, NattakornSubject: search.filters.subject.Annealing temperature

Search Results

Now showing 1 - 1 of 1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering
    (2020-09-01)
    Charoenyuenyao, Peerasil
    ;
    Promros, Nathaporn
    ;
    Chaleawpong, Rawiwan
    ;
    Borwornpornmetee, Nattakorn
    ;
    Sittisart, Pattarapol
    Iron disilicide (FeSi<inf>2</inf>) films were formed onto Si(111) substrates via radio-frequency magnetron sputtering at room temperature (RT) and 560 °C. The effects of annealing temperature and carbon (C) doping concentration on the physical properties of FeSi<inf>2</inf> films were investigated. For annealing conditions, the crystallinity of the unannealed FeSi<inf>2</inf> films was enhanced after annealing. The surface of unannealed FeSi<inf>2</inf> films consisted of many small crystallites, which were clustered after annealing at 500 °C. The root mean square roughness (R<inf>rms</inf>) of the unannealed FeSi<inf>2</inf> films increased from 0.94 nm to 5.32 nm after air-annealing at 500 °C. The surface of the unannealed FeSi<inf>2</inf> films exhibited an average contact angle (θ<inf>CA</inf>) of 102.35°, which decreased to 41.70° after annealing at 500 °C. For C-doping conditions, the X-ray diffraction patterns for the undoped and C-doped FeSi<inf>2</inf> revealed β(202/220) and β(404/440) peaks. The undoped FeSi<inf>2</inf> film surfaces presented many small grains with grain boundaries, where the C-doped FeSi<inf>2</inf> films displayed a finer surface. R<inf>rms</inf> of the undoped FeSi<inf>2</inf> film surface was 15.71 nm, which decreased to 10.59 nm for 3.0 at.% C-doped FeSi<inf>2</inf> films. The average θ<inf>CA</inf> of the undoped FeSi<inf>2</inf> films was 108.35°, and this reduced slightly to 103.65° for 3.0 at.% C-doped films. Based on the obtained results, it was shown that the as-formed FeSi<inf>2</inf> and FeSi<inf>2</inf> films after annealing at 100 and 300 °C formed at T<inf>sub</inf> of RT, together with the undoped and C-doped FeSi<inf>2</inf> films formed at T<inf>sub</inf> of 560 °C, could potentially be employed for hydrophobic coating applications.