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Author: search.filters.author.Chaisriratanakul, WoraphanSubject: search.filters.subject.EG-FET

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    Item type:Publication,
    High sensitive nanocrystal titanium nitride EG-FET pH sensor
    (2013-10-29)
    Rayanasukha, Yossawat
    ;
    Porntheeraphat, Supanit
    ;
    Bunjongpru, Win
    ;
    Khemasiri, Narathon
    ;
    Pankiew, Apirak
    Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO<inf>2</inf>/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The I<inf>DS</inf>-V<inf>GS</inf> measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.