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Rational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film
(2025-08-10)
Khemasiri, Narathon
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Chananonnawathorn, Chanunthorn
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Horprathum, Mati
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Pornthreeraphat, Supanit
;
Saekow, Bunpot
Amorphous metal-oxynitride films—particularly zinc oxynitride (ZnON)—are emerging as promising materials for next-generation high-speed switching electronics, due to the absence of a potential barrier above the conduction band, unlike metal-doped ZnO. However, conventional reactive magnetron sputtering often face challenges in precisely controlling in an anion ratio, N/(N + O), because of the different reactivities of nitrogen and oxygen gases. In this work, we present a strategy to precisely control both the crystal structure and N/(N + O) ratio in ZnON films using a reactive gas-timing technique. By adjusting the oxygen gas-timing sequence (t<inf>O₂</inf>), we selectively induce different crystalline phases, which are closely related to the nitridation and oxidation of the sputtered Zn atom/cluster. This technique facilitates effective N incorporation into ZnO, enabling a broad range of N/(N + O) ratios from 0.048 to 0.964 and optical band gap variations from 1.49 eV to 3.22 eV. At an optimal t<inf>O₂</inf>, an amorphous phase is formed, attributed to a balanced nitridation and oxidation rate of the sputtered Zn atom/cluster that suppresses crystallization. The resultant amorphous ZnON film exhibits a high carrier mobility of 84.81 cm²/Vs, which is 1.16-fold and 35.89-fold greater than those of the cubic and hexagonal ZnON films, respectively. Our findings highlight the effectiveness of the reactive gas-timing technique as a powerful tool for the rational design of metal-oxynitride films, paving the way for their application in advanced electronic devices.
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Design and Implementation of a High-Field NdFeB Magnet System for Investigating the Spin Seebeck Effect
(2025-01-01)
Nachaithong, Theeranuch
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Wongjom, Chalothon
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Samransuksamer, Benjarong
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Phumying, Santi
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Pongophas, Ekkarat
The generation of pure spin current through thermal gradients, known as the spin Seebeck effect (SSE), has garnered significant interest in spintronics. In this study, we design and construct a permanent magnetic instrument setup to generate a variable external magnetic field using NdFeB permanent magnets to observe the SSE. The experimental setup is composed of three crucial components: the magnetic field, the temperature gradient, and electronic control systems. Si/yttrium iron garnet (YIG)/platinum (Pt) and Si/nickel (Ni) samples, prepared via sputtering techniques, were utilized for standard calibration purposes. The results show that the external magnetic field produced by NdFeB varies with the gap distance between the two magnetic poles, following an exponential decrease in field strength with increasing gap distance. The magnetic field at the center can be adjusted from ±20 to ±5000 Oe. The temperature gradient stabilizes after approximately 10 min, with a temperature difference ( ΔT ) between the heated and cooled sides ranging from 0 to 30 K. For instrument testing, we performed magnetic field and angle-dependent measurements on Si/YIG/Pt and Si/Ni samples. The results indicate that the magnetic field dependence of the permanent magnet instrument (PMI) does not exhibit the voltage loop switching seen with an alternative magnetic coil (AMC) but shows analogous behavior at high magnetic fields. Moreover, the angle dependence of both PMI and AMC yielded comparable results. In conclusion, our PMI setup procedures effectively facilitate the observation of the SSE.
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Spin Seebeck effect and large spin conversion in amorphous Fe2TiSb/polycrystalline Y3Fe5O12 thin films
(2024-05-30)
Wongjom, Poramed
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
This study investigates spin current generation in a Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> multi-layer thin film as prepared via the magnetron sputtering method. Comprehensive characterization techniques are employed to assess film properties, including X-ray diffraction, energy-dispersive X-ray spectroscopy, Scanning electron microscopy, and Vibrating sample magnetometer. The Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> material exhibits a polycrystalline ferromagnetic insulator behavior, while the 20 nm-thick Fe<inf>2</inf>TiSb film displays small ferromagnetic metal properties with an amorphous structure. Spin current analysis utilizes the longitudinal spin Seebeck effect configuration, considering magnetic field and temperature dependencies and the results show that spin conversion within the Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> structure is influenced by both the spin Seebeck effect and the anomalous Nernst effect, resulting in an overall spin signal enhancement. The spin Seebeck coefficient of Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> was approximately 0.103 μV/K within a magnetic field of 300 mT.
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Investigating the shunting effect in a Fe/Co ferromagnetic metal hybrid structure and its impact on the spin Seebeck effect
(2024-03-01)
Phumying, Santi
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
The generation of spin voltage by heat, known as the spin Seebeck effect (SSE), involves the injection of spin current from a ferromagnetic to a normal metal. In this study, the shunting effect in SSE is investigated within a hybrid structure consisting of iron (Fe) and cobalt (Co) films deposited on a Si-wafer substrate using thermal evaporation [Si/Fe(500 nm)/Co(10 nm)]. Spin voltage measurements performed in the in-plane configuration revealed a voltage reversal in the Co film and Fe film. However, in the hybrid structure (Si/Fe/Co), the voltage signal exhibited consistent directionality. This intriguing observation hints at a potential shunting effect, wherein the voltage influence from the Fe layer contributes to the Co film. Consequently, it is deduced that a significant shunting effect occurs when the resistivity of Fe is approximately three orders of magnitude lower than that of the Co film. This insight sheds light on the intricate dynamics of spin thermoelectric applications, emphasizing the role of material properties in optimizing performance.
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The Spin Voltage Enhancement in Si/YIG/Co, Fe Spin Hall Thermopiles
(2024-01-01)
Kumpor, Wimutti
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Kuptapol, Perawas
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
Spin-Hall thermopiles have been previously proposed as a means to enhance the spin Seebeck effect (SSE). However, the use of platinum (Pt) for spin detection drives costs high and proves an impediment for scalability. In this work, a cost-effective spin-Hall thermopile constructed from opposite spin-Hall angle ferromagnets, cobalt (Co) and iron (Fe), is reported. The devices are fabricated using a standard sputter-coated yttrium iron garnet (YIG) substrate that serves as the spin injector, and thermally evaporated Co and Fe strips that enable spin detection. When serially connected to form a (YIG/Co, Fe) thermopile structure, measurements indicate a significant enhancement of the spin voltage that results from the additive spin contributions of the opposite spin-Hall angle ferromagnets and the anomalous Nernst effect (ANE) that they exhibit. The YIG/Co, Fe thermopile reported here offers a cost-effective alternative to Pt-based thermopiles and the possibility of large-scale implementation to realize future thermoelectric generators.
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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
(2023-06-01)
Jessadaluk, Sukittaya
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Khemasiri, Narathon
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Kayunkid, Navaphun
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Rangkasikorn, Adirek
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Wirunchit, Supamas
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf>3+ and Sb<inf>Zn</inf>+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
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Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
(2023-03-01)
Khemasiri, Narathon
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Klamchuen, Annop
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
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Borklom, Punlapa
Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.
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Fabrication and Characterization of Ag–Ta Thin Films by Co-Magnetron Sputtering as Alternative Layer for High Reflection of NIR Radiation
(2023-01-01)
Phae-Ngam, Wuttichai
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Rattana, Tanattha
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Kamoldilok, Surachart
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Kohmun, Kanokporn
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Nakajima, Hideki
Silver–tantalum (Ag–Ta) thin films were fabricated by magnetron co-sputtering on silicon (Si) wafer (100) and glass slide substrates at room temperature. The Ag–Ta thin films were prepared at various deposition times of 5, 10, 20 and 30 s and the physical, structural and optical properties of the Ag–Ta thin films were investigated. It was determined that the thicknesses of the films were 7, 9, 17 and 33 nm, respectively. The results revealed that an increase in the film thickness leads to a monotonic increase in FCC and BCC phase of Ag and Ta, respectively. The work function and stoichiometric of the Ag–Ta thin films were investigated by ultraviolet and X-ray photoemission spectroscopies (UPS and XPS), respectively. The potential of Ag–Ta thin films to be used as low-emission coating was investigated using a spectrophotometer. A UV–VIS–NIR spectrophotometer was used to measure the spectral reflectance in the wavelength range from 300 to 2000 nm. The results showed that the Ag–Ta thin film deposited for 30 s exhibited higher reflectance in NIR region than those of 5, 10, 20 and 30 s. It demonstrated an average reflectance of about 80% and slightly decreased to 75% after being kept in the air atmosphere for 28 days. It can be likewise proposed as an alternative thin film with high reflectance of NIR radiation single layer to develop industrial low-emission coating for cost-effective, clean, and easy adaptation to a large area coating.
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Low-Cost Instrument for the Versatile Measurement of Spin Caloritronic Phenomena: Spin Seebeck Effect, Anisotropic Magnetoresistance, Anomalous Hall Effect, and Anomalous Nernst Effect
(2023-01-01)
Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
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Phumying, Santi
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Pattanakul, Rungrueang
In this article, we report on a low-cost instrument for the versatile measurement of spin caloritronics phenomena such as the spin Seebeck effect (SSE), anomalous Nernst effect (ANE) anisotropic magnetoresistance (AMR), and anomalous Hall effect (AHE). Solenoid coils provide a uniform variable magnetic field while the sample was sandwiched between thermal baths and measured in a vacuum chamber. Our results show excellent magnetic field uniformity (±0.37 mT) within the magnet gap and high stability of the generated temperature difference (±0.07 K). For verifying the effectiveness of our instrument, Yttrium Iron garnet (YIG)/Co structure was used to measure the SSE, AMR, and AHE, while a SiO2/Co structure was used for measuring the ANE. Our SSE measurements of the YIG/Co structure were found to be comparable with that of a commercially available instrument. We can therefore conclude that our low-cost and versatile instrument can be used to effectively observe spin Caloritronics phenomena.
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Phase evolution in annealed Ni-doped WO3 nanorod films prepared via a glancing angle deposition technique for enhanced photoelectrochemical performance
(2022-05-15)
Wattanawikkam, Chakkaphan
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Bootchanont, Atipong
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Porjai, Porramain
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Jetjamnong, Chanthawut
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Kowong, Rattanachai
Ni-doped WO<inf>3</inf> nanorod films were fabricated via a reactive magnetron cosputtering with a glancing angle deposition technique. The crystal structure and surface morphology were observed using grazing incident X-ray diffraction and field emission Scanning Electron Microscopy, respectively. The chemical compositions and oxidation state of each element were investigated by X-ray photoemission spectroscopy. The local structure and phase evolution were investigated via X-ray absorption spectroscopy. The local structure of Ni atoms in WO<inf>3</inf> nanorod films is characterized as a NiWO<inf>4</inf> nanocluster in the WO<inf>3</inf> matrix, which is supported by calculated spectra. The phase information obtained after annealing demonstrates that short-length order in amorphous transitions to crystallinity. The phase information of the local structures were acquired and discussed as well as the effect on the annealing process. The coupling of amorphous WO<inf>3</inf>, crystalline WO<inf>3</inf>, and amorphous NiWO<inf>4</inf> exhibits high photoelectrochemical activity of the sample annealed at 400 °C, which was observed with a large current density (2.35 μA/cm2) at 1.20 V vs. Ag/AgCl under visible light irradiation, which is greater than that of the unmodified WO<inf>3</inf> photoelectrode (1.38 μA/cm2).

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