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Author: search.filters.author.Chanlek, NarongSubject: search.filters.subject.p-n junctions

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    Highly Flexible Tribovoltaic Nanogenerator Based-on P-N Junction Interface: Comparative Study on Output Dependency Dominated by Photovoltaic Effect in Freestanding-Mode
    (2023-10-18)
    Sriphan, Saichon
    ;
    Worathat, Supakarn
    ;
    Pharino, Utchawadee
    ;
    Chanlek, Narong
    ;
    Pakawanit, Phakkhananan
    The emergence of tribovoltaic nanogenerators (TVNGs) paves the way for developing a new kind of semiconductor-based energy harvester that overcomes the restriction of low output current in a conventional approach. The traditional TVNG generally depends on the frictional pair between two rigid semiconductors (or metal-semiconductor), limiting the practicability of flexible and portable electronics. Recent developments require the fundamental understanding of charge generation in diverse operating modes and structures. Here, a flexible TVNG based on the p-Cu<inf>2</inf>O/n-g-C<inf>3</inf>N<inf>4</inf> interface is presented. Operating in a freestanding mode, the proposed TVNG can generate a stable signal in any optical conditions including UV illumination, dark, and ambient. Under UV illumination, the electrical outputs of the TVNG reach 0.43 V and 2.1 µA cm<sup>−2</sup>, which are significantly larger than those obtained from dark and ambient conditions. The results demonstrate the coupling effect of three phenomena: tribovoltaic, photovoltaic, and triboelectric effects, and the unique mechanism to the observed signal is proposed. Additionally, the TVNG shows the practical feasibility of energy harvesting with capacitor charging and charge-boosting circuits. This study showcases the unique concept with potential for developing a novel flexible nanogenerator in many aspects, including material, structure, and fundamental mechanism.