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Author: search.filters.author.Charoenyuenyao, PeerasilSubject: search.filters.subject.Iron disilicide

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    Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering
    (2022-08-01)
    Charoenyuenyao, Peerasil
    ;
    Chaleawpong, Rawiwan
    ;
    Borwornpornmetee, Nattakorn
    ;
    Paosawatyanyong, Boonchoat
    ;
    Sittimart, Phongsaphak
    Using facing-targets sputtering, semiconducting iron disilicide (β-FeSi<inf>2</inf>) film layers were sputtered and coated on Si wafers owning (111) orientation. Under experimental conditions, the heating temperatures of the substrate (T<inf>substrate</inf>) were varied at 525 °C, 550 °C, 600 °C and 660 °C. The acquired XRD patterns indicated a strong β(202/220) peak of around 29.1° for the β-FeSi<inf>2</inf> films prepared at a T<inf>substrate</inf> of at least 600 °C. The β-FeSi<inf>2</inf> film surface prepared at a T<inf>substrate</inf> of 525 °C comprised several crystallites, which were arranged to form a grain format at a higher T<inf>substrate</inf>. The root mean square roughness for the film surface prepared at a T<inf>substrate</inf> of 525 °C was 0.49 nm, where it increased to 0.98 nm, 2.39 nm, and 4.23 nm at T<inf>substrate</inf> of 550 °C, 600 °C, and 660 °C, respectively. The films prepared at a T<inf>substrate</inf> of 525 °C exhibited an average contact angle (θ<inf>CA</inf>) of 91.15°, and improved to 103.80° after employing a T<inf>substrate</inf> of 660 °C. These results hinted at the possibility of employing the β-FeSi<inf>2</inf> films prepared at all T<inf>substrate</inf> in the hydrophobic surface application. The estimated hardness and elastic modulus of the β-FeSi<inf>2</inf> films prepared at T<inf>substrate</inf> of 525 °C were 12.78 GPa and 190.98 GPa, respectively, which increased to 21.27 GPa and 248.67 GPa, respectively, for the films prepared at 660 °C. According to mechanical results, the β-FeSi<inf>2</inf> films prepared at 660 °C exhibited the potential to be developed for use in hard coating application.
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    Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering
    (2020-09-01)
    Charoenyuenyao, Peerasil
    ;
    Promros, Nathaporn
    ;
    Chaleawpong, Rawiwan
    ;
    Borwornpornmetee, Nattakorn
    ;
    Sittisart, Pattarapol
    Iron disilicide (FeSi<inf>2</inf>) films were formed onto Si(111) substrates via radio-frequency magnetron sputtering at room temperature (RT) and 560 °C. The effects of annealing temperature and carbon (C) doping concentration on the physical properties of FeSi<inf>2</inf> films were investigated. For annealing conditions, the crystallinity of the unannealed FeSi<inf>2</inf> films was enhanced after annealing. The surface of unannealed FeSi<inf>2</inf> films consisted of many small crystallites, which were clustered after annealing at 500 °C. The root mean square roughness (R<inf>rms</inf>) of the unannealed FeSi<inf>2</inf> films increased from 0.94 nm to 5.32 nm after air-annealing at 500 °C. The surface of the unannealed FeSi<inf>2</inf> films exhibited an average contact angle (θ<inf>CA</inf>) of 102.35°, which decreased to 41.70° after annealing at 500 °C. For C-doping conditions, the X-ray diffraction patterns for the undoped and C-doped FeSi<inf>2</inf> revealed β(202/220) and β(404/440) peaks. The undoped FeSi<inf>2</inf> film surfaces presented many small grains with grain boundaries, where the C-doped FeSi<inf>2</inf> films displayed a finer surface. R<inf>rms</inf> of the undoped FeSi<inf>2</inf> film surface was 15.71 nm, which decreased to 10.59 nm for 3.0 at.% C-doped FeSi<inf>2</inf> films. The average θ<inf>CA</inf> of the undoped FeSi<inf>2</inf> films was 108.35°, and this reduced slightly to 103.65° for 3.0 at.% C-doped films. Based on the obtained results, it was shown that the as-formed FeSi<inf>2</inf> and FeSi<inf>2</inf> films after annealing at 100 and 300 °C formed at T<inf>sub</inf> of RT, together with the undoped and C-doped FeSi<inf>2</inf> films formed at T<inf>sub</inf> of 560 °C, could potentially be employed for hydrophobic coating applications.