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Author: search.filters.author.Charoenyuenyao, PeerasilSubject: search.filters.subject.Wettability

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    Physical properties of fe3si films coated through facing targets sputtering after microwave plasma treatment
    (2021-08-01)
    Borwornpornmetee, Nattakorn
    ;
    Charoenyuenyao, Peerasil
    ;
    Chaleawpong, Rawiwan
    ;
    Paosawatyanyong, Boonchoat
    ;
    Phatthanakun, Rungrueang
    Fe<inf>3</inf>Si films are deposited onto the Si(111) wafer using sputtering with parallel facing targets. Surface modification of the deposited Fe<inf>3</inf>Si film is conducted by using a microwave plasma treatment under an Ar atmosphere at different powers of 50, 100 and, 150 W. After the Ar plasma treatment, the crystallinity of the coated Fe<inf>3</inf>Si films is enhanced, in which the orientation peaks, including (220), (222), (400), and (422) of the Fe<inf>3</inf>Si are sharpened. The extinction rule suggests that the B<inf>2</inf>–Fe<inf>3</inf>Si crystallites are the film’s dominant composition. The stoichiometry of the Fe<inf>3</inf>Si surfaces is marginally changed after the treatment. An increase in microwave power damages the surface of the Fe<inf>3</inf>Si films, resulting in the generation of small pinholes. The roughness of the Fe<inf>3</inf>Si films after being treated at 150 W is insignificantly increased compared to the untreated films. The untreated Fe<inf>3</inf>Si films have a hydrophobic surface with an average contact angle of 101.70<sup>◦</sup> . After treatment at 150 W, it turns into a hydrophilic surface with an average contact angle of 67.05<sup>◦</sup> because of the reduction in the hydrophobic carbon group and the increase in the hydrophilic oxide group. The hardness of the untreated Fe<inf>3</inf>Si is ~9.39 GPa, which is kept at a similar level throughout each treatment power.
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    Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering
    (2020-09-01)
    Charoenyuenyao, Peerasil
    ;
    Promros, Nathaporn
    ;
    Chaleawpong, Rawiwan
    ;
    Borwornpornmetee, Nattakorn
    ;
    Sittisart, Pattarapol
    Iron disilicide (FeSi<inf>2</inf>) films were formed onto Si(111) substrates via radio-frequency magnetron sputtering at room temperature (RT) and 560 °C. The effects of annealing temperature and carbon (C) doping concentration on the physical properties of FeSi<inf>2</inf> films were investigated. For annealing conditions, the crystallinity of the unannealed FeSi<inf>2</inf> films was enhanced after annealing. The surface of unannealed FeSi<inf>2</inf> films consisted of many small crystallites, which were clustered after annealing at 500 °C. The root mean square roughness (R<inf>rms</inf>) of the unannealed FeSi<inf>2</inf> films increased from 0.94 nm to 5.32 nm after air-annealing at 500 °C. The surface of the unannealed FeSi<inf>2</inf> films exhibited an average contact angle (θ<inf>CA</inf>) of 102.35°, which decreased to 41.70° after annealing at 500 °C. For C-doping conditions, the X-ray diffraction patterns for the undoped and C-doped FeSi<inf>2</inf> revealed β(202/220) and β(404/440) peaks. The undoped FeSi<inf>2</inf> film surfaces presented many small grains with grain boundaries, where the C-doped FeSi<inf>2</inf> films displayed a finer surface. R<inf>rms</inf> of the undoped FeSi<inf>2</inf> film surface was 15.71 nm, which decreased to 10.59 nm for 3.0 at.% C-doped FeSi<inf>2</inf> films. The average θ<inf>CA</inf> of the undoped FeSi<inf>2</inf> films was 108.35°, and this reduced slightly to 103.65° for 3.0 at.% C-doped films. Based on the obtained results, it was shown that the as-formed FeSi<inf>2</inf> and FeSi<inf>2</inf> films after annealing at 100 and 300 °C formed at T<inf>sub</inf> of RT, together with the undoped and C-doped FeSi<inf>2</inf> films formed at T<inf>sub</inf> of 560 °C, could potentially be employed for hydrophobic coating applications.