Development synthesizing diamond film on silicon substrate was processed by Hot Filament Chemical Vapor Deposition (HFCVD). The gas processes using of H<inf>2</inf> and CH<inf>4</inf> to produce intrinsic diamond and MSM device constructed on the diaphragm of diamond film. Schottky junctions on the top and the lower diaphragm were produced by aluminum metal. After that, the result of detecting a direct and indirect X-ray of MSM diamond was satisfactory because it could respond along with increasing of X-ray intensity. The X-ray expose time of indirect expose by BaF<inf>2</inf> scintillator faster more than direct expose.
