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Author: search.filters.author.Chindaudom, P.Subject: search.filters.subject.Tantalum oxide

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    Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery
    (2019-06-01)
    Chittinan, D.
    ;
    Buranasiri, P.
    ;
    Lertvanithphol, T.
    ;
    Eiamchai, P.
    ;
    Patthanasettakul, V.
    Dynamic in-situ spectroscopic ellipsometry (iSE) was employed to investigate the growth mechanism of the tantalum oxide (TaO) film on silicon wafer substrate deposited by reactive gas-timing RF magnetron sputtering compared with conventional reactive sputtering. The effect of reactive gas timing parameter on physical structure and optical property were analyzed by both the continuous and island film growth model with Tauc-Lorentz optical model. The variation of refractive index, film thickness and void volume fraction were obtained from dynamic fits of iSE data indicated that the growth process of the amorphous TaO thin films was divided into two regimes: the nucleation stage and continuous-layer stage. These stages were observed during deposition although the initial film growth stage corresponds to the island film growth model. The study demonstrates that sputtered TaO by the RGT technique at the O<inf>2</inf> on-off gas timing has played a crucial factor in improving the formation of nucleation stage and that the deposited TaO thin films were high deposition rate with high refractive index. The complementary field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) showed a good agreement with the film thickness and morphology obtained from dynamic iSE measurement. The real-time monitoring of iSE offers important evidences to understand the growth mechanism of reactive gas-timing technique.
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    Investigation of optical characteristics of the evaporated Ta2O5 thin films based on ellipsometry and spectroscopy
    (2017-01-01)
    Prachachet, R.
    ;
    Buranasiri, P.
    ;
    Horprathum, M.
    ;
    Eiamchai, P.
    ;
    Limwichean, S.
    The tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) thin films were prepared by the ion-assisted electron-beam evaporation system. With the fixed film thickness at 200 nm, the deposition conditions were performed based on oxygen flow rate the ion assistance during the film deposition. The prepared thin films were characterized by spectroscopic ellipsometry in order to determine their physical and optical properties. From the ellipsometric measurements, the physical structures of the thin films and the optical dispersions were constructed, and then analyzed for the results of film thickness and optical constants. The thin films were also measured by the UV-Vis-NIR spectrophotometry for the optical transmission. The measured transmission was analyzed with the Swanepoel method, whose results also yielded the thickness and the refractive index. Finally, the thin films were examined by the scanning electron microscopy (SEM) in order to observe physical microstructures. This study explored the physical and optical analyses based on the spectroscopic ellipsometry and the spectrophotometry, with the confirmations from the SEM micrographs. The results from the analyses would be compared and thoroughly discussed.