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Author: search.filters.author.Chirawatkul, PraeSubject: search.filters.subject.Copper-doped tin dioxide

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    Item type:Publication,
    Simultaneous O2 plasma and thermal treatment for improved surface conductivity of Cu-Doped SnO2 films
    (2019-08-01)
    Somjaijaroen, Natthawirot
    ;
    Sakdanuphab, Rachsak
    ;
    Chanlek, Narong
    ;
    Chirawatkul, Prae
    ;
    Sakulkalavek, Aparporn
    Cu-doped SnO<inf>2</inf> thin films were deposited on a glass substrate using radio frequency magnetron sputtering. The effects of varying the O<inf>2</inf> partial pressure during the deposition process and post-O<inf>2</inf> plasma treatment at 420 °C were investigated. Bulk and surface oxidation states were measured by X-ray absorption near-edge structure spectroscopy and X-ray photoelectron spectroscopy. The as-deposited films exhibited oxygen deficient compositions and Cu<sup>+</sup> or Cu<sup>2+</sup> ions, which depend on the deposited O<inf>2</inf> partial pressure. After the post-plasma treatment, the films changed from an amorphous structure into a low crystalline film. X-ray diffraction results indicated substitutional doping, wherein some Sn<sup>4+</sup> ions were replaced with Cu<sup>+</sup> or Cu<sup>2+</sup> ions. The O<inf>2</inf> plasma treatment can remove Cu<sup>2+</sup> and O<sup>2−</sup> from the film surface. The oxygen deficiency defects and Cu<sup>+</sup>- or Cu<sup>2+</sup>- doped present at the surface are the key factors in controlling the sheet resistance of the Cu-doped SnO<inf>2</inf> film. The minimum sheet resistance was obtained after the plasma treatment of the films deposited at a 2% O<inf>2</inf> partial pressure.