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Author: search.filters.author.Chodjarusawad, ThanaweeSubject: search.filters.subject.Antimony-doped tin oxide films (ATO)

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    Item type:Publication,
    Selective formations of antimony-dopant for highly sensitive nitrogen dioxide responsive behavior of tin oxide-based chemiresistive sensor
    (2025-02-15)
    Rattanawarinchai, Prapakorn
    ;
    Khemasiri, Narathon
    ;
    Rahong, Sakon
    ;
    Rangkasikorn, Adirek
    ;
    Kayunkid, Navaphun
    Here, selective formation of antimony (Sb) dopant species responsible for highly sensitive gas sensors based on tin oxide (SnO<inf>2</inf>) film grown via pulsed laser deposition is presented. By elevating a forming energy through controlling substrate temperature, not only crystallinity of Sb-SnO<inf>2</inf> (ATO) is notably enhanced but the Sb<sup>5 +</sup> also predominantly replace at Sn<sup>4+</sup> site rather than Sb<sup>3+</sup> counterpart. Such Sb-species selection plays a crucial role on the density of oxygen vacancy and free electron enabling to rationally design conductive behaviour of ATO film from insulative to degenerated semiconductor. As a practical example, detection of nitrogen dioxide (NO<inf>2</inf>) gas is selected as an application model. We found a narrow window for high NO<inf>2</inf> sensing performance of ATO film which strongly corresponds with the amount of carrier density. At certain window, ATO film exhibits high NO<inf>2</inf> response of 24.65 (10 ppm) and low limit of detection of 0.5 ppm, which is 5-fold higher and 10-fold lower than that of undoped-SnO<inf>2</inf>, respectively. Our finding demonstrates a facile approach to design over the chemical state, defect, and conductivity of the active sensing layer, allowing us to achieve an excellent sensing performance of functional materials conjugated to a nano-electronic platform.