KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Author: search.filters.author.Funasaki, SuguruSubject: search.filters.subject.Diode parameter

Search Results

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering
    (2014-01-01)
    Promros, Nathaporn
    ;
    Funasaki, Suguru
    ;
    Iwasaki, Ryuhei
    ;
    Yoshitake, Tsuyoshi
    n-Type nanocrystalline FeSi<inf>2</inf>/intrinsic Si/p-type Si heterojunctions were prepared by FTDCS. In order to estimate their diode parameters such as ideality factor, barrier height and series resistance, their current-voltage characteristics were measured in the temperature range from 300 to 77 K and analyzed on the basis of thermionic emission theory and Cheung's method. Based on thermionic emission theory, the ideality factor was calculated from the slope of the linear part from the forward lnJ-V characteristics. The barrier height was calculated once the saturation current density was derived from the straight line intercept of lnJ-V plot at a zero voltage. The obtained results exhibit an increase of ideality factor and a decrease of barrier height at low temperatures, which might be owing to inhomogeneity of material and non-uniformity of charge at the interface. Based on Cheung's method, the ideality factor and barrier height were estimated from y-axis intercept of dV/d(lnJ)-J plot and y-axis intercept of H(J)-J plot, respectively. The series resistance was analyzed from the slopes of dV/d(lnJ)-J and H(J)-J plots. The values of ideality factor and barrier height obtained from this method are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d(lnJ)-J and H(J)-J plots, which were approximately equal to each others, were increased as the temperature decreased. This result should be owing to the increased ideality factor and remarkably reduced carrier concentrations at low temperatures. © (2014) Trans Tech Publications, Switzerland.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films
    (2014-01-01)
    Promros, Nathaporn
    ;
    Funasaki, Suguru
    ;
    Takahara, Motoki
    ;
    Shaban, Mahmoud
    ;
    Yoshitake, Tsuyoshi
    N-Type β-FeSi<inf>2</inf>/p-type Si heterojunctions have been successfully fabricated by facingtargets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10<sup>-6</sup> A/cm<sup>2</sup> to 3.8 × 10<sup>-10</sup> A/cm<sup>2</sup>. From the plots of dV/d(lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.