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Author: search.filters.author.Goto, TakashiSubject: search.filters.subject.Spark plasma sintering

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    Fabrication of tungsten carbide–diamond composites using SiC-coated diamond
    (2019-12-01)
    Kitiwan, Mettaya
    ;
    Goto, Takashi
    Tungsten carbide (WC) and SiC-coated diamond composites were prepared by spark plasma sintering at 1473–1873 K for 300 s under 130 MPa under vacuum. The diamond particle surface was coated with silicon carbide (SiC) via rotary chemical vapor deposition to improve the interfacial bonding of the WC–diamond composites. The relative density of the WC–20 vol% diamond (SiC) composite increased from 61% to 94% with increasing sintering temperature. Raman spectroscopic analysis showed that the diamond-to-graphite transition did not occur at any of the investigated sintering temperatures. The WC–20 vol% diamond composite sintered at 1773–1873 K exhibited high hardness (30.5 GPa) and fracture toughness (12.3 MPa m<sup>1/2</sup>). The high hardness resulted from the SiC coating functioning as an interlayer to improve the bonding between the diamond and WC body. The improvement in fracture toughness was attributed to the presence of diamond, which effectively blocks crack propagation and promotes crack deflection.
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    Effect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering
    (2019-01-01)
    Taki, Yukina
    ;
    Kitiwan, Mettaya
    ;
    Katsui, Hirokazu
    ;
    Goto, Takashi
    B-doped SiC bodies were fabricated by spark plasma sintering at 2373 K, 50 MPa, 300 s in a vacuum and N<inf>2</inf> atmosphere. The relative density of 1 mol% B doped-SiC body sintered in a vacuum and 5 mol% B doped-SiC body sintered in N<inf>2</inf> atmosphere were 97 and 98%, respectively. The electrical conductivity of B-doped SiC bodies sintered in a vacuum with 0.5 mol% B and that with 1 mol% B sintered in N<inf>2</inf> atmosphere showed semi-insulative conduction in the range of 3-510<sup>-3</sup> S m<sup>-1</sup> at room temperature. The thermal conductivity of B-doped SiC body at 0.5 at% B sintered in a vacuum were 185 W m<sup>-1</sup> K<sup>-1</sup> while that at 1 at% B sintered in N<inf>2</inf> atmosphere were 177 W m<sup>-1</sup> K<sup>-1</sup> at room temperature.