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Author: search.filters.author.Harnwunggmoung, AdulSubject: search.filters.subject.Antimony telluride

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    Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
    (2021-11-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Nuthongkum, Pilaipon
    ;
    Pluengphon, Prayoonsak
    ;
    Harnwunggmoung, Adul
    Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10<sup>−3</sup> W/mK<sup>2</sup> at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.
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    Enhancing the thermoelectric properties of sputtered Sb2Te3 thick films via post-annealing treatment
    (2020-04-15)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakulkalavek, Aparporn
    ;
    Harnwunggmoung, Adul
    ;
    Limsuwan, Pichet
    Sb<inf>2</inf>Te<inf>3</inf> films of more than 10 μm in thickness were deposited on flexible polyimide substrates by heat treatment-assisted DC magnetron sputtering. The post-annealing parameters including the temperature (150–350 °C) and time (15–60 min) were varied to investigate the microstructure, chemical composition, porosity and thermoelectric properties of the thick films. X-ray diffraction showed that both the as-deposited and post-annealed films were polycrystalline with significant preferential growth along the (015) plane. The films showed slightly off-stoichiometric compositions after post-annealing treatment. Increasing the annealing temperature and annealing time led to an increase in crystalline size and a decrease in porosity of the thick films. This was related to grain growth, agglomeration and surface improvement. The electrical transport and thermoelectric properties including carrier concentration, carrier mobility, electrical conductivity and Seebeck coefficient were investigated using Hall effect measurements and a ZEM-3 apparatus. A maximum power factor of 1.7 mW/K<sup>2</sup>m was obtained following annealing at 350 °C for 30 min.