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Author: search.filters.author.Harnwunggmoung, AdulSubject: search.filters.subject.DC magnetron sputtering

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    Influence of Sputtering Power Density on the Thermoelectric and Mechanical Properties of Flexible Thermoelectric Antimony Telluride Films Deposited by DC Magnetron Sputtering
    (2020-05-01)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakdanuphab, Rachsak
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    Antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) films were deposited on flexible polyimide substrates by DC magnetron sputtering technique using a 99.9% alloy Sb<inf>2</inf>Te<inf>3</inf> target. We measured structural, electrical, thermoelectric and mechanical properties with sputtering power density in the range 30–50 W. X-ray diffraction confirmed that all Sb<inf>2</inf>Te<inf>3</inf> films have high crystallinity with a significant preferential growth along the (015) plane. Surface morphologies were verified by scanning electron microscope: deposited film grain size increased with sputtering power density. The elemental composition was determined by energy dispersive x-ray spectroscopy. Electrical transport properties, carrier concentration, was measured by Hall effect measurement at room temperature. Electrical conductivity and Seebeck coefficient were simultaneously measured by a DC four-terminal method (ZEM-3). The power factor was strongly dominated by electrical conductivity, leading to a maximum of 1.95 mW/K<sup>2</sup>m with sputtering power 45 W at 300°C. The wettability test, based on the contact angle, evaluated surface energy and hydrophilicity. Nanoindentation was measured on a NHT<sup>2</sup> CSM Instrument with diamond Berkovich indenter (B-P 31) at room temperature. The hardness and elastic modulus of deposited Sb<inf>2</inf>Te<inf>3</inf> films increased with the power density.
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    Enhancing the thermoelectric properties of sputtered Sb2Te3 thick films via post-annealing treatment
    (2020-04-15)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakulkalavek, Aparporn
    ;
    Harnwunggmoung, Adul
    ;
    Limsuwan, Pichet
    Sb<inf>2</inf>Te<inf>3</inf> films of more than 10 μm in thickness were deposited on flexible polyimide substrates by heat treatment-assisted DC magnetron sputtering. The post-annealing parameters including the temperature (150–350 °C) and time (15–60 min) were varied to investigate the microstructure, chemical composition, porosity and thermoelectric properties of the thick films. X-ray diffraction showed that both the as-deposited and post-annealed films were polycrystalline with significant preferential growth along the (015) plane. The films showed slightly off-stoichiometric compositions after post-annealing treatment. Increasing the annealing temperature and annealing time led to an increase in crystalline size and a decrease in porosity of the thick films. This was related to grain growth, agglomeration and surface improvement. The electrical transport and thermoelectric properties including carrier concentration, carrier mobility, electrical conductivity and Seebeck coefficient were investigated using Hall effect measurements and a ZEM-3 apparatus. A maximum power factor of 1.7 mW/K<sup>2</sup>m was obtained following annealing at 350 °C for 30 min.