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    Item type:Publication,
    Influence of Sputtering Power Density on the Thermoelectric and Mechanical Properties of Flexible Thermoelectric Antimony Telluride Films Deposited by DC Magnetron Sputtering
    (2020-05-01)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakdanuphab, Rachsak
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    Antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) films were deposited on flexible polyimide substrates by DC magnetron sputtering technique using a 99.9% alloy Sb<inf>2</inf>Te<inf>3</inf> target. We measured structural, electrical, thermoelectric and mechanical properties with sputtering power density in the range 30–50 W. X-ray diffraction confirmed that all Sb<inf>2</inf>Te<inf>3</inf> films have high crystallinity with a significant preferential growth along the (015) plane. Surface morphologies were verified by scanning electron microscope: deposited film grain size increased with sputtering power density. The elemental composition was determined by energy dispersive x-ray spectroscopy. Electrical transport properties, carrier concentration, was measured by Hall effect measurement at room temperature. Electrical conductivity and Seebeck coefficient were simultaneously measured by a DC four-terminal method (ZEM-3). The power factor was strongly dominated by electrical conductivity, leading to a maximum of 1.95 mW/K<sup>2</sup>m with sputtering power 45 W at 300°C. The wettability test, based on the contact angle, evaluated surface energy and hydrophilicity. Nanoindentation was measured on a NHT<sup>2</sup> CSM Instrument with diamond Berkovich indenter (B-P 31) at room temperature. The hardness and elastic modulus of deposited Sb<inf>2</inf>Te<inf>3</inf> films increased with the power density.