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Item type:Publication, MSM diamond UV detector(2011-10-04) ;Cheirsirikul, S. ;Jesen, S.Hruanun, C.Development Synthesizing Diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH4) to produce intrinsic diamond and then constructing MSM device on the diaphragm of diamond film. Schotthy junctions on the top and the lower of the diaphragm were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. Then, the spectral response was investigated for the light wavelength in the range of 190 nm to 800 nm. The results showed that the device had good response to UV light and very low response to visible light. After that the device was sintered at 450OC in different times in order to find the decreased leakage current and proper response time. © 2011 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Nanocrystal-ZnO thin film deposition by a novel reactive gas-timing RF magnetron sputtering provided for UV photodetectors(2010-02-05) ;Panprom, P. ;Porntheeraphat, S. ;Bunjongpru, W. ;Tiwawong, T.Yamwong, W.The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO<inf>2</inf>/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O<inf>2</inf> were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO<inf>2</inf>/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact. © (2010) Trans Tech Publications.
