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    Item type:Publication,
    Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence
    (2013-11-01)
    Sriprapha, Kobsak
    ;
    Hongsingthong, Aswin
    ;
    Krajangsang, Taweewat
    ;
    Inthisang, Sorapong
    ;
    Jaroensathainchok, Suttinan
    Hydrogenated amorphous silicon oxide (a-SiO:H)/hydrogenated amorphous silicon (a-Si:H) double-junction solar cells with a high open-circuit voltage (V<inf>oc</inf>) and a low temperature coefficient (TC) were developed using a wide bandgap a-SiO:H film as the intrinsic (i) layer of the top cell. It was found that with an increasing carbon dioxide (CO<inf>2</inf>)/silane (SiH <inf>4</inf>) ratio, the optical bandgap (E<inf>opt</inf>) of the a-SiO:H films increased remarkably while the photogain tended to decrease. By employing an optimized a-SiO:H film as the i top layer of the a-SiO:H/a-Si:H solar cell, an initial conversion efficiency (η) of 10.2% was obtained. This solar cell showed a higher η than the conventional a-Si:H/a-Si:H structure, a result of incremental improvements in the V<inf>oc</inf> and short-circuit current density (J<inf>sc</inf>), which were attributed to the wider bandgap of the intrinsic top layer. It was found that the TC for η of the a-SiO:H/a-Si:H solar cell was -0.10%/°C, slightly lower than that of the a-Si:H/a-Si:H solar cell, whose TC value is about -0.15%/°C. The light-induced degradation (LID) ratio for η of the a-SiO:H/a-Si:H solar cell was approximately 19%, which was 2% lower than that of the a-Si:H/a-Si:H solar cell. These results have demonstrated the great potential of the i-a-SiO:H films as absorber layers of top cells in multi-junction silicon-based thin-film solar cells. The a-SiO:H/a-Si:H solar cells with low TCs and low LID ratios are attractive for their potential use in high-temperature environments or tropical regions. © 2013 Elsevier B.V.