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Author: search.filters.author.Jitthamapirom, PiyaSubject: search.filters.subject.Flexible Bi2Te3

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    Item type:Publication,
    Comparison of thermoelectric properties of flexible bismuth telluride thin films deposited via DC and RF magnetron sputtering
    (2019-11-18)
    Jitthamapirom, Piya
    ;
    Wanarattikan, Pornsiri
    ;
    Nuthongkum, Pilaipon
    ;
    Sakdanuphab, Rachsak
    ;
    Sakulkalavek, Aparporn
    Bi<inf>2</inf>Te<inf>3</inf> thin films were deposited onto polyamide sheets with direct current (DC) or radio frequency (RF) magnetron sputtering techniques. The films were prepared using a Bi<inf>2</inf>Te<inf>3</inf> target at a varying pre-heating temperature from 150 to 350 °C. It was observed that the type of plasma excitation and pre-heating temperature can significantly change the composition, preferred orientation, crystallinity, and thermoelectric properties of the films. The pre-heat treatment significantly affected the non-stoichiometric composition. In addition, it was shown that crystallinity and (0 0 l) planes were enhanced in the DC sputtered coatings at a high pre-heating temperature. The maximum power factor of 3.5 × 10<sup>−3</sup> W/m K<sup>2</sup> at 285 °C was obtained for the films deposited using DC magnetron sputtering and a pre-heating temperature of 350 °C. The carrier concentration and mobility of the film were 5.40 × 10<sup>20</sup> cm<sup>−3</sup> and 13.04 cm<sup>2</sup>/V s, respectively. Compared with an ordinary Bi<inf>2</inf>Te<inf>3</inf> film, the power factor of such film has been greatly increased. The results indicated that DC magnetron sputtering can enhance the (0 0l) plane orientation in the Bi<inf>2</inf>Te<inf>3</inf> film.