KMITL
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Item type:Publication, Preparation of SiO2-diamond composites by spark plasma sintering(2021-01-01) ;Kitiwan, Mettaya ;Katsui, HirokazuGoto, TakashiSiO<inf>2</inf>-diamond composites with 65–85 mass% diamond were fabricated by spark plasma sintering at 1873 K under 130 MPa for 300 s using bimodal diamond particle size of 2 and 25 µm in diameter. The diamond particles were coated with a SiC layer by chemical vapor deposition. The effects of diamond content on relative density, microstructure, and Vickers hardness of the SiO<inf>2</inf>-diamond composites were investigated. The SiO<inf>2</inf>-diamond composites exhibited relative density of 96%, and Vickers hardness of 36.2 ± 3.6 GPa at 75 mass% diamond content. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering(2019-01-01) ;Taki, Yukina ;Kitiwan, Mettaya ;Katsui, HirokazuGoto, TakashiB-doped SiC bodies were fabricated by spark plasma sintering at 2373 K, 50 MPa, 300 s in a vacuum and N<inf>2</inf> atmosphere. The relative density of 1 mol% B doped-SiC body sintered in a vacuum and 5 mol% B doped-SiC body sintered in N<inf>2</inf> atmosphere were 97 and 98%, respectively. The electrical conductivity of B-doped SiC bodies sintered in a vacuum with 0.5 mol% B and that with 1 mol% B sintered in N<inf>2</inf> atmosphere showed semi-insulative conduction in the range of 3-510<sup>-3</sup> S m<sup>-1</sup> at room temperature. The thermal conductivity of B-doped SiC body at 0.5 at% B sintered in a vacuum were 185 W m<sup>-1</sup> K<sup>-1</sup> while that at 1 at% B sintered in N<inf>2</inf> atmosphere were 177 W m<sup>-1</sup> K<sup>-1</sup> at room temperature.
