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Author: search.filters.author.Kayunkid, NavaphunSubject: search.filters.subject.Pulsed laser deposition

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    Growth window and metal-insulator transition behavior of VO2 thin films deposited by pulsed laser deposition for thermal switch applications
    (2026-05-01)
    Jessadaluk, Sukittaya
    ;
    Rahong, Sakon
    ;
    Kayunkid, Navaphun
    ;
    Khemasiri, Narathon
    ;
    Rangkasikorn, Adirek
    Vanadium dioxide (VO<inf>2</inf>) is a strongly correlated transition metal oxide that exhibits a sharp and reversible metal-insulator transition (MIT) near room temperature, making it a promising material for thermal switching and adaptive electronic applications. In this study, VO<inf>2</inf> thin films were deposited on single-crystalline Si, thermally grown SiO<inf>2</inf>, and fused quartz substrates by pulsed laser deposition, and the influence of substrate temperature and oxygen partial pressure on phase formation, structural properties, and MIT behavior was systematically investigated. By optimizing deposition conditions within a narrow oxygen pressure window, phase-pure monoclinic VO<inf>2</inf>(M) thin films with high crystalline quality were achieved while suppressing the formation of over-oxidized vanadium oxide phases. Structural and chemical analyses using X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the stabilization of the V4+ oxidation state and uniform film stoichiometry. Temperature-dependent electrical measurements revealed a pronounced and reproducible MIT characterized by an abrupt change in resistance and a clear thermal hysteresis. In-situ temperature-dependent X-ray diffraction further demonstrated a direct correlation between the monoclinic-rutile structural transformation and the electronic transition. Importantly, the MIT behavior was consistently observed across all investigated substrates, indicating robust film growth and substrate tolerance. These results provide insight into the structure-property relationships governing VO<inf>2</inf> thin films and highlight their potential for integration into thermal switch and thermally adaptive device architectures.
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    Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
    (2023-03-01)
    Khemasiri, Narathon
    ;
    Klamchuen, Annop
    ;
    Jessadaluk, Sukittaya
    ;
    Rattanawarinchai, Prapakorn
    ;
    Borklom, Punlapa
    Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10<sup>−3</sup> Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm<sup>2</sup> is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.