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    Item type:Publication,
    Influence of baking temperature on relevant properties of sol-gel Ga-doped ZnO thin films annealed at low temperature
    (2018-01-01)
    Ruangon, K.
    ;
    Khamon, W.
    ;
    Pecharapa, W.
    Ga-doped ZnO(GZO) transparent thin films were grown onto glass substrates by sol-gel based spin coating process. After each coating, the as-deposited film was thermally baked at different moderate temperatures ranging from 100°C to 250°C followed by calcinations at certain temperature lower than 400°C. Characterization were conducted on calcined samples using scanning electron microscope (SEM), X-ray diffraction (XRD), optical spectroscopy and Fourier transform infrared spectroscopy (FTIR). The influence of baking temperature on crucial properties including structural, morphological and optical properties of Ga-doped ZnO transparent thin films were extensively investigated. XRD patterns exhibited typical polycrystalline of hexagonal wurtzite structure of as-deposited thin films and baking temperature is considered as one of essential key parameters affecting the crucial properties of the prepared films.
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    Item type:Publication,
    Acid surface treatment of sol-gel derived ZnO thin films for anti-reflection coating application
    (2016-01-01)
    Khamon, W.
    ;
    Pecharapa, W.
    Transparent ZnO films were deposited by sol-gel spin coating process. HCl acid was used in the wet etching process to modify its surface morphology that can be used as an antireflective layer of optoelectric devices. The effect of etching time on its structure, surface morphologies and optical properties were scrutinized. The overall results indicated that HCl acid has obviously effect on significant change in surface morphologies and its roughness varied in the range of 0.5 nm to 4.9 nm.