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Item type:Publication, Simultaneous stoichiometric composition and highly (00l) orientation of flexible Bi2Te3thin films via optimising the DC magnetron sputter-deposition process(2019-01-30); ;Kianwimol, Supasak ;Harnwunggmoung, Adul; Simultaneous stoichiometric composition and highly (00l) orientation of flexible Bi<inf>2</inf>Te<inf>3</inf> thin films were investigated under the DC magnetron sputtering parameters. Stoichiometric Bi<inf>2</inf>Te<inf>3</inf> and highly (00l) orientation structure was obtained by sputtering conditions, preheat temperature at 350 °C, and working pressure of 1.8 × 10<sup>−3</sup> mbar. This designed structure of layered compact feature with stoichiometry provide the relatively high mobility. The maximum carrier mobility of 118 cm<sup>2</sup>/V was observed for highly (00l) film. The electrical conductivity of thin film has been greatly enhanced, to a maximum of about 14.90 × 10<sup>3</sup> S/cm at 50 °C. This value is higher than those of hot-pressed or spark plasma sintering n-type Bi<inf>2</inf>Te<inf>3</inf> bulk alloys. The maximum power factor of 12.5 × 10<sup>−3</sup> W/m.K<sup>2</sup> was obtained at 300 °C.1
