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The new simulation model for estimating PV power output
(2017-10-19)
Manosukritkul, Phasapon
;
Titiroongruang, Wisut
This paper proposed the new simulation model for estimate PV Power Output of power plant in Thailand. Our development model were used the solar irradiance and module temperature as input of model. The model has develop by using one year measured data of focus area and verified by comparison with measured data. The results shown high accuracy and error about 1.11 %.
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Verification of new model by comparison with actual data
(2017-10-19)
Manosukritkul, Phasapon
;
Titiroongruang, Wisut
This papers shows the results of testing the power output of the solar PV system using silicon crystals used in the test. Then simulate the power output in the form of thirdgeneration model. The first generation model (1D5P) at a second series Weight Function Model and form a third model has been developed. The test system with 28 kWp The results show that the first form (1D5P) error of 14.40%. models the second error of 5.02% in the third form a models that has developed error of 1.05%.
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A novel power output model for photovoltaic system
(2017-10-19)
Kittisontirak, Songkiate
;
Dawan, Promphak
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Atiwongsangthong, Narin
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Titiroongruang, Wisut
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Chinnavornrungsee, Perawut
This paper proposed the novel concept model for forecasting the PV power output. The model was used two meteorology to input model which are solar irradiance and module temperature. This model was improve the accuracy of model from simplified model is 1D5P by using the weight function. The proposed model was verified by comparison with measured data. The results showed that the model has high accuracy. The RMSE ranges from 0.02 to 0.07 and average RMSE is 0.04.
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Comparison of PV estimation model with measured PV power output
(2017-10-19)
Kittisontirak, Songkiate
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Niemcharoen, Surasak
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Titiroongruang, Wisut
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Limmanee, Amornrat
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Sitthiphol, Nopphadol
This paper describes a comparison of proposed model with simulation software and measurement data of PV power plant in Cambodia. The proposed model is based on behavior of PV module at a particular site. The parameters which affected to PV power output as solar irradiance and module temperature were used as input in this model. Weight function technics were used to improve accuracy of single diode five parameters (1D5P). It was found that the proposed model can improve the accuracy of PV power output estimation model.
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An improvement of the breakdown voltage characteristics of NPT-TIGBT by using a P-buried layer
(2013-08-30)
Manosukritkul, Phasapon
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Kerdpardist, Amonrat
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Saenlamool, Montree
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Chaowicharat, Ekalak
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Poyai, Amporn
In this paper, we introduced a P-buried (P<inf>b</inf>) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The P<inf>b</inf> layer, with carrier concentration of 5 ×10<sup>16</sup> cm<sup>-3</sup>, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT. © (2013) Trans Tech Publications, Switzerland.

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