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Item type:Publication, Intrinsic Enhancement of Permittivity with Ultralow Dielectric Loss in Donor-Acceptor Co-Doped Rutile TiO2 Ceramics(2021-01-01) ;Pulphol, Phieraya ;Pongampai, Satana ;Charoonsuk, Thitirat ;Vittayakorn, WanwilaiMuanghua, RangsonThe immense potential of colossal dielectric materials for use in high-energy-density storage applications has driven much recent development and research. The discovering of such dielectric materials with the required high permittivity and low dielectric loss is still a highly challenging. Herein, the donor-acceptor co-doped TiO<inf>2</inf> has been developed based on (Mg<inf>0.5</inf>W<inf>0.5</inf>) <inf>x</inf> Ti<inf>1-</inf><inf>x</inf> O<inf>2</inf>, (In<inf>0.5</inf>W<inf>0.5</inf>) <inf>x</inf> Ti<inf>1-</inf><inf>x</inf> O<inf>2</inf> and (Ni<inf>0.5</inf>Nb<inf>0.5</inf>) <inf>x</inf> Ti<inf>1-</inf><inf>x</inf> O<inf>2</inf>; where x = 0.005–0.01, that manifests high permittivity (>10<sup>4</sup>). The resulted permittivity attains the quadruple than that of pure TiO<inf>2</inf> ceramic with low dielectric loss of ∼0.02 over a broad temperature range. This performance is corresponded to the electron-pinned defect-dipoles, providing the extra dielectric response to those of rutile TiO<inf>2</inf> host ceramics. This research offers the way to develop functional colossal-dielectric materials by engineering complex defects into the bulk that will help for further discovery of promising new dielectric materials in future.
