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Tailoring ZnO Nanostructures through Precursor Concentration and Hydrothermal Duration: A Pathway to Efficient Solar Water Splitting
(2026-11-10)
Borklom, Phanlapa
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Khemasiri, Narathon
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
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Kayunkid, Navaphun
This work investigated the formation of ZnO nanostructures on ITO substrates prepared by self-seeding hydrothermal synthesis for photoelectrochemical ( PEC) water splitting applications. The hydrothermal parameters, precursor concentration and hydrothermal time, were varied to explore their influences on ZnO crystallinity, morphology, and PEC performance. The combinations of X-ray diffraction and field emission scanning electron microscopy revealed highly oriented ZnO nanostructures with diverse morphologies, including small granules, nanorods, dense films, and hexagonal platelets. Topographic profiling of the morphological parameters revealed complex relationships between synthesis conditions and nanostructure characteristics, highlighting the importance of considering aggregation phenomena in substrate-based growth. This aggregation led to deviations from conventional crystal growth theory predictions, particularly for grain density and diameter evolution. PEC performance evaluation identified ZnO nanorods as the optimal morphology, exhibiting a photocurrent density of 0.182 mA/cm² at 0 V vs. Ag/AgCl. Further enhancement was achieved by decorating ZnO nanorods with CdS nanoparticles, resulting in a six-fold increase in photocurrent density (1.2 mA/cm²). This improvement is attributed to expanded light absorption and improved charge separation at the CdS/ ZnO interface. Our findings demonstrate the potential of rationally designed ZnO-based nanostructures in the advancement of solar-driven water splitting technologies and provide valuable insights for optimizing PEC systems through precise control of hydrothermal synthesis parameters, consideration of substrate-induced aggregation, and strategies for photoelectrochemical (PEC) water splitting applications.
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Growth window and metal-insulator transition behavior of VO2 thin films deposited by pulsed laser deposition for thermal switch applications
(2026-05-01)
Jessadaluk, Sukittaya
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Rahong, Sakon
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Kayunkid, Navaphun
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Khemasiri, Narathon
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Rangkasikorn, Adirek
Vanadium dioxide (VO<inf>2</inf>) is a strongly correlated transition metal oxide that exhibits a sharp and reversible metal-insulator transition (MIT) near room temperature, making it a promising material for thermal switching and adaptive electronic applications. In this study, VO<inf>2</inf> thin films were deposited on single-crystalline Si, thermally grown SiO<inf>2</inf>, and fused quartz substrates by pulsed laser deposition, and the influence of substrate temperature and oxygen partial pressure on phase formation, structural properties, and MIT behavior was systematically investigated. By optimizing deposition conditions within a narrow oxygen pressure window, phase-pure monoclinic VO<inf>2</inf>(M) thin films with high crystalline quality were achieved while suppressing the formation of over-oxidized vanadium oxide phases. Structural and chemical analyses using X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the stabilization of the V4+ oxidation state and uniform film stoichiometry. Temperature-dependent electrical measurements revealed a pronounced and reproducible MIT characterized by an abrupt change in resistance and a clear thermal hysteresis. In-situ temperature-dependent X-ray diffraction further demonstrated a direct correlation between the monoclinic-rutile structural transformation and the electronic transition. Importantly, the MIT behavior was consistently observed across all investigated substrates, indicating robust film growth and substrate tolerance. These results provide insight into the structure-property relationships governing VO<inf>2</inf> thin films and highlight their potential for integration into thermal switch and thermally adaptive device architectures.
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Rational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film
(2025-08-10)
Khemasiri, Narathon
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Chananonnawathorn, Chanunthorn
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Horprathum, Mati
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Pornthreeraphat, Supanit
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Saekow, Bunpot
Amorphous metal-oxynitride films—particularly zinc oxynitride (ZnON)—are emerging as promising materials for next-generation high-speed switching electronics, due to the absence of a potential barrier above the conduction band, unlike metal-doped ZnO. However, conventional reactive magnetron sputtering often face challenges in precisely controlling in an anion ratio, N/(N + O), because of the different reactivities of nitrogen and oxygen gases. In this work, we present a strategy to precisely control both the crystal structure and N/(N + O) ratio in ZnON films using a reactive gas-timing technique. By adjusting the oxygen gas-timing sequence (t<inf>O₂</inf>), we selectively induce different crystalline phases, which are closely related to the nitridation and oxidation of the sputtered Zn atom/cluster. This technique facilitates effective N incorporation into ZnO, enabling a broad range of N/(N + O) ratios from 0.048 to 0.964 and optical band gap variations from 1.49 eV to 3.22 eV. At an optimal t<inf>O₂</inf>, an amorphous phase is formed, attributed to a balanced nitridation and oxidation rate of the sputtered Zn atom/cluster that suppresses crystallization. The resultant amorphous ZnON film exhibits a high carrier mobility of 84.81 cm²/Vs, which is 1.16-fold and 35.89-fold greater than those of the cubic and hexagonal ZnON films, respectively. Our findings highlight the effectiveness of the reactive gas-timing technique as a powerful tool for the rational design of metal-oxynitride films, paving the way for their application in advanced electronic devices.
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Selective formations of antimony-dopant for highly sensitive nitrogen dioxide responsive behavior of tin oxide-based chemiresistive sensor
(2025-02-15)
Rattanawarinchai, Prapakorn
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Khemasiri, Narathon
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Rahong, Sakon
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Rangkasikorn, Adirek
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Kayunkid, Navaphun
Here, selective formation of antimony (Sb) dopant species responsible for highly sensitive gas sensors based on tin oxide (SnO<inf>2</inf>) film grown via pulsed laser deposition is presented. By elevating a forming energy through controlling substrate temperature, not only crystallinity of Sb-SnO<inf>2</inf> (ATO) is notably enhanced but the Sb5 + also predominantly replace at Sn4+ site rather than Sb3+ counterpart. Such Sb-species selection plays a crucial role on the density of oxygen vacancy and free electron enabling to rationally design conductive behaviour of ATO film from insulative to degenerated semiconductor. As a practical example, detection of nitrogen dioxide (NO<inf>2</inf>) gas is selected as an application model. We found a narrow window for high NO<inf>2</inf> sensing performance of ATO film which strongly corresponds with the amount of carrier density. At certain window, ATO film exhibits high NO<inf>2</inf> response of 24.65 (10 ppm) and low limit of detection of 0.5 ppm, which is 5-fold higher and 10-fold lower than that of undoped-SnO<inf>2</inf>, respectively. Our finding demonstrates a facile approach to design over the chemical state, defect, and conductivity of the active sensing layer, allowing us to achieve an excellent sensing performance of functional materials conjugated to a nano-electronic platform.
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Reusability, Long-Life Storage and Highly Sensitive Zirconium Nitride (ZrN) Surface-Enhanced Raman Spectroscopy (SERS) Substrate Fabricated by Reactive Gas-Timing Rf Magnetron Sputtering
(2023-12-22)
Sucheewa, Nguentra
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Wongwiriyapan, Winadda
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Rattanawarinchai, Prapakorn
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Wuttikhun, Tuksadon
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Sinthiptharakoon, Kittiphat
Transition metal nitrides (TMN) are promising material alternative to replace noble metals in the field of plasmonic applications, especially surface-enhanced Raman spectroscopy (SERS). Here we demonstrate a practical surface enhanced Raman spectroscopy (SERS) substrate using zirconium nitride (ZrN) thin films grown by reactive gas-timing (RGT) rf magnetron sputtering. The tailored properties of ZrN thin film exploited for SERS activity could be achieved to obtain a highly sensitive ZrN thin film SERS substrate with the enhancement factor (EF) of 1.24 × 106 and 4.8 %RSD at 1626 cm-1 toward methylene blue (MB) analyte which are comparable to the optimized Au sputtered thin films (EF=1.18 × 106 and with 5.1%RSD). We find that the spatial plasmonic hotspots on the surface of ZrN SERS substrate controlled by the turn-on timing of Ar:N2 sputtered gas sequence, leading to the discrete conductive surface profile, strongly relates to non-stoichiometric composition and the degree of (200)-oriented texture at the surface of ZrN thin film. Furthermore, ZrN thin film SERS substrates exhibit an excellent recyclability more than 30 cycles with simple cleaning process and a storage time longer than 6 months. The detection and reusability of ZrN SERS substrate on the low concentration of trinitrotoluene (TNT) for homeland security are also performed.
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Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus
(2023-11-01)
Pormrungruang, Pareesa
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Phanthanawiboon, Supranee
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Jessadaluk, Sukittaya
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Larpthavee, Preeda
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Thaosing, Jiraphon
Rapid and sensitive detection of Dengue virus remains a critical challenge in global public health. This study presents the development and evaluation of a Zinc Oxide nanorod (ZnO NR)-surface-integrated microfluidic platform for the early detection of Dengue virus. Utilizing a seed-assisted hydrothermal synthesis method, high-purity ZnO NRs were synthesized, characterized by their hexagonal wurtzite structure and a high surface-to-volume ratio, offering abundant binding sites for bioconjugation. Further, a comparative analysis demonstrated that the ZnO NR substrate outperformed traditional bare glass substrates in functionalization efficiency with 4G2 monoclonal antibody (mAb). Subsequent optimization of the functionalization process identified 4% (3-Glycidyloxypropyl)trimethoxysilane (GPTMS) as the most effective surface modifier. The integration of this substrate within a herringbone-structured microfluidic platform resulted in a robust device for immunofluorescence detection of DENV-3. The limit of detection (LOD) for DENV-3 was observed to be as low as 3.1 × 10−4 ng/mL, highlighting the remarkable sensitivity of the ZnO NR-integrated microfluidic device. This study emphasizes the potential of ZnO NRs and the developed microfluidic platform for the early detection of DENV-3, with possible expansion to other biological targets, hence paving the way for enhanced public health responses and improved disease management strategies.
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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
(2023-06-01)
Jessadaluk, Sukittaya
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Khemasiri, Narathon
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Kayunkid, Navaphun
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Rangkasikorn, Adirek
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Wirunchit, Supamas
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf>3+ and Sb<inf>Zn</inf>+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
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WO3:AgInS2 quantum dot electron transport layers in enhanced perovskite solar cells
(2023-04-14)
Seriwattanachai, Chaowaphat
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Kaewprajak, Anusit
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Sukgorn, Nuttaya
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Kumnorkaew, Pisist
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Nukeaw, Jiti
The development of the electron transport layers (ETL) was crucially important for the improvement of charge extraction and transportation in perovskite solar cells (PSCs). Here, dual electron transport layers of TiO<inf>2</inf> and WO<inf>3</inf> mixed with different sizes of AgInS<inf>2</inf> quantum dots (TiO<inf>2</inf>/WO<inf>3</inf>:AgInS<inf>2</inf> QDs) were fabricated for planar perovskite solar cells. The peak intensity of the photoluminescence (PL) of the synthesized AgInS<inf>2</inf> QDs were redshifted from 554 to 655 nm with an increased radius of AgInS<inf>2</inf> QDs from 3.82 ± 0.52 to 7.78 ± 1.37 nm. The PL intensity of the perovskite film on TiO<inf>2</inf>/WO<inf>3</inf>:AgInS<inf>2</inf> QDs was quenched by the addition of AgInS<inf>2</inf> QDs. The improved device stability was probably caused by the WO<inf>3</inf>:AgInS<inf>2</inf> QDs layer protecting the interface of perovskite layers from direct contact with TiO<inf>2</inf> to prevent UV decomposing. Therefore, the TiO<inf>2</inf>/WO<inf>3</inf>:AgInS<inf>2</inf> QDs as electron transport layers promoted the perovskite solar cell performance and enhanced the long-term stability. Graphical abstract: [Figure not available: see fulltext.].
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Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
(2023-03-01)
Khemasiri, Narathon
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Klamchuen, Annop
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
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Borklom, Punlapa
Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.
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Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates
(2022-01-01)
Sucheewa, Nguentra
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Wongwiriyapan, Winadda
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Klamchuen, Annop
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Obata, Michiko
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Fujishige, Masatsugu
This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

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