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    Item type:Publication,
    Reduced graphene oxide thin film prepared by electrostatic spray deposition technique
    (2019-03-15)
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Reduced graphene oxide (rGO) thin films were prepared by one-step electrostatic spray deposition (ESD) technique with a precursor solution of graphene oxide in mixed alcohol solvent. The deposited rGO films showed decreasing thicknesses ranging from approximately 340 nm–120 nm as substrate temperature increased from 150 °C to 275 °C. Raman spectroscopy indicated lowest intensity ratio of D to G band (I <inf>D</inf> /I <inf>G</inf> ) of the rGO films at substrate temperature of 275 °C. Highest carbon per oxygen (C/O) ratio was also obtained at substrate temperature of 275 °C. The ESD technique was used for film deposition on an area of 5 × 5 cm <sup>2</sup> , while an acetone gas sensor based on single layer rGO film was fabricated by one-step ESD technique. Results indicated the possibility of controlling thickness components in the rGO film, and the capability of large-area production by this scalable ESD method.
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    Item type:Publication,
    Electrical bistable properties of ZnO nanoparticles thin film prepared by electrostatic spray deposition technique
    (2015-07-01)
    Chaithanatkun, Natpasit
    ;
    Chantarawong, Direklit
    ;
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    Thin films of zinc oxide nanoparticles (ZnO NPs) for bistable device was prepared by electrostatic spray deposition technique based on an indium-tin oxide/ZnO NPs/aluminum (ITO/ZnO NPs /Al) structure. The characterizations of ZnO NPs films were performed using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM). The influence of the deposition time on properties of films was also investigated. Moreover, the effect of deposition time on the bistable properties can be performed by current-voltage (I-V) measurements. The conduction mechanism of the bistable device was analyzed by theoretical model.