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Author: search.filters.author.Onlaor, KorakotSubject: search.filters.subject.Graphene oxide

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    Electrical properties of bistable device based on graphene oxide composited with polyvinylpyrrolidone thin films
    (2021-01-01)
    Thiwawong, Thutiyaporn
    ;
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Tunhoo, Benchapol
    This research studied the bistable properties of synthesized graphene oxide (GO) composited with polyvinylpyrrolidone (PVP). The devices were fabricated using a spin coating process on indium tin oxide (ITO)/glass substrate, and the top electrodes were prepared by thermal evaporation with the device structure of ITO/PVP:GO/Al. The PVP:GO films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, X-ray photoemission spectroscopy, and scanning electron microscopy. The current-voltage (I-V) characteristics of the fabricated device exhibited a maximum ON/OFF current ratio in the order of about 10<sup>4</sup> at a GO concentration of 4 wt%. The mechanism was explained by fitting with the results of the I-V measurement. Moreover, the retention test of the device was more than 2×10<sup>4</sup> s. The device showed the important characteristics of memory to be a candidate for data storage.
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    Reduced graphene oxide thin film prepared by electrostatic spray deposition technique
    (2019-03-15)
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Reduced graphene oxide (rGO) thin films were prepared by one-step electrostatic spray deposition (ESD) technique with a precursor solution of graphene oxide in mixed alcohol solvent. The deposited rGO films showed decreasing thicknesses ranging from approximately 340 nm–120 nm as substrate temperature increased from 150 °C to 275 °C. Raman spectroscopy indicated lowest intensity ratio of D to G band (I <inf>D</inf> /I <inf>G</inf> ) of the rGO films at substrate temperature of 275 °C. Highest carbon per oxygen (C/O) ratio was also obtained at substrate temperature of 275 °C. The ESD technique was used for film deposition on an area of 5 × 5 cm <sup>2</sup> , while an acetone gas sensor based on single layer rGO film was fabricated by one-step ESD technique. Results indicated the possibility of controlling thickness components in the rGO film, and the capability of large-area production by this scalable ESD method.
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    Humidity sensor based on graphene oxide film prepared by simple drop-casting process
    (2017-01-01)
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Tunhoo, Benchapol
    In this work, the film of graphene oxide was deposited by drop-casting process for humidity sensor device. The structural property of graphene oxide film was performed by Raman spectroscopy. The humidity device was fabricated onto the indium tin oxide, as the transparent electrode. The device exhibited the adsorption and desorption behaviors of humidity in a range of 23-93 %RH. The complex impedance measurement was used to explain the mechanisms of the humidity device. The equivalent circuit model of the device was demonstrated.