he temperature behavior that influential to the electron mobility on top surface in 14 nanometer FinFET channel. The Mobility could find on I-V characterizing simulation process and giving the result from the TCAD software by biasing on the FinFET structure with gate voltage at 1 volt and the drain-source voltage from 0 Volt to 1 Volt to obtain the saturation drain current from I-V characteristic. The Electron mobility was lowering by increasing the temperature from 303K (30°C) to 353K (80°C). This FinFET structure gave the I<inf>DS (Sat)</inf> about 29 µA and gave mobility at V<inf>DS</inf> = 0 Volt about 575 cm<sup>2</sup>/Vs, at V<inf>DS</inf> = 1 Volt, the mobility dramatically down to 3.4 cm<sup>2</sup>/Vs.
