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Author: search.filters.author.Punsawat, WoratatSubject: search.filters.subject.CCTO

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    Dielectric Relaxation and Microstructures of SnO2 Doped CaCu3Ti4O12 Electroceramics Prepared Via Vibro-milling Method
    (2017-01-01)
    Makcharoen, Worawut
    ;
    Punsawat, Woratat
    High dielectric constant CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf> (CCTO) is a compound with a high dielectric constant, but it has a high loss tangent at room temperature. This research aims to study on the dielectric properties and loss tangent of SnO<inf>2</inf> doped CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf> (CCTO) ceramics were investigated. The ceramic samples of SnO<inf>2</inf> doping CCTO were prepared by a solid-state reaction method. The characterization of the samples was carried out using scanning electron microscopy (SEM) and x-ray diffraction (XRD). The conventional solid-state reaction was employed. The metal oxide powders were mixed using a vibratory milling for 6 hour and sintered at 1000°C for 4 hour. The phase formation of the calcined powders and sintered ceramics was examined by X-ray diffraction technique (XRD). Microstructure was examined by scanning electron microscopy (SEM). SnO<inf>2</inf> doping produced a notable decrease in grain size. Average values of grain size, as measured by the linear intercept method. The dielectric measurements at room temperature to 130°C, in the frequency range 100 Hz- 500 kHz. The XRD result a CCTO structure does not changes on Sn doped samples. The results show the loss tangent at room temperature and at 100 kHz decreased from 0.14 for the 0 mol% Sn doped CCTO sample to 0.04 for the 2.0 mol% Sn doped sample while at 500 kHz, it was decreased from 0.2 for the undoped CCTO sample to 0.04 for the 2.0 mol% Sn doped sample. However, the lowest loss tangent was 0.02 at 500 kHz and at 65°C and show a stable loss tangent in temperature range 25 - 130°C.