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Ultrathin AlN barrier coatings for enhancing surface chemical stability and suppressing electrochemical migration in immersion silver–finished printed circuit boards
(2026-08-15)
Kaewbuadee, Woraprach
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Theekhasuk, Nattharika
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Khumtong, Thanakorn
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Rudradawong, Chalermpol
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Sakdanuphab, Rachsak
Immersion silver-finished printed circuit boards (PCB-ImAg) provide low contact resistance and excellent solderability, but their chemical instability in humid and sulfur-containing environments can compromise long-term reliability. In this study, ultrathin aluminum nitride (AlN) films (20–60 nm) were deposited on PCB-ImAg substrates by reactive DC magnetron sputtering as inorganic barrier layers. Their protective performance was evaluated by accelerated H<inf>2</inf>S exposure, long-term ambient air exposure, tape testing, electrical resistance measurements, electrochemical migration (ECM) testing under a 3 V bias at 30 °C and 80% RH, and surface characterization. Uncoated PCB-ImAg samples showed severe tarnishing, Ag<inf>2</inf>S formation, dendritic corrosion, and a marked increase in electrical resistance after both H<inf>2</inf>S and prolonged air exposure. In contrast, AlN-coated samples retained a cleaner surface, remained adherent after the tape test, and showed much smaller resistance changes. X-ray photoelectron spectroscopy detected sulfur-related chemical states only on the uncoated surfaces, indicating suppression of sulfide formation by the AlN layer. A 20 nm AlN coating was sufficient for anti-tarnish and ambient air stability, whereas coatings of 40 nm or greater were required for robust ECM suppression. These results demonstrate that ultrathin AlN films effectively improve the corrosion resistance and ECM reliability of PCB-ImAg surfaces.
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Optimal AIN film deposition conditions for enhancing surface corrosion resistance and silver appearance
(2026-05-01)
Sanguanmak, Pattarapol
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Sakdanuphab, Rachsak
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Sakulkalavek, Aparporn
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Rudradawong, Chalermpol
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Somjaijaroen, Natthawirot
This study investigates the development of AlN thin-film protective coatings for enhancing the corrosion resistance, surface hardness, and color stability of Ag 925 substrates used in decorative and wearable applications. AlN coatings were deposited by reactive DC magnetron sputtering, and the influences of working pressure and film thickness on bonding chemistry, oxygen incorporation, optical appearance, and artificial-sweat corrosion resistance were systematically evaluated. Increasing the working pressure promoted Al–O bond formation and noticeable surface discoloration, consistent with enhanced oxygen uptake that disrupted the near-surface Al–N bonding network. In contrast, films deposited within a moderate pressure window (2.5–7.5 × 10−1 Pa) exhibited minimal color change (ΔE < 3), maintained stable Al–N bonding characteristics, and achieved a hardness of approximately 5.2 GPa. Film thickness further governed the protective performance: ultrathin AlN layers provided only limited resistance, whereas coatings thicker than ~ 300 nm significantly improved surface resistance, as supported by the reduced chloride-induced discoloration (ΔE decreased from ~ 33.6 to ~ 11) and the effective suppression of Ag and Cu oxidation, as confirmed by FE-SEM/EDS analysis. These results demonstrate that both an optimal working pressure regime and a sufficiently thick coating (> 300 nm) are essential for achieving long-term color stability and corrosion resistance in wearable silver applications.
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Sputter-deposited AlN coatings for enhanced tarnish resistance and mechanical durability of silver jewelry
(2026-04-01)
Sudsawad, Kanyarat
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Somjaijaroen, Natthawirot
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Somdock, Nuttakrit
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Sakdanuphab, Rachsak
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Sakulkalavek, Aparporn
Silver jewelry is prone to surface tarnishing caused by sulfur-containing species in ambient environments. In this study, a transparent aluminum nitride–based thin film was deposited by magnetron sputtering and evaluated as a protective barrier against silver tarnishing. Sheets of 99.9% pure silver were coated under various nitrogen flow conditions to optimize film composition and performance. An appropriate nitrogen flow rate of 25 standard cubic centimeters per minute (sccm), corresponding to an N₂/Ar gas ratio of approximately 1:1, was identified for forming AlN-rich films, while an AlN-based film thickness in the range of 80–110 nm was found to be suitable for jewelry protection. X-ray photoelectron spectroscopy analysis showed that insufficient nitrogen availability suppresses complete nitridation, resulting in residual metallic aluminum, which readily reacts with residual oxygen and moisture, increasing the oxygen content in the films. At an N₂ flow rate of 25 sccm, metallic aluminum was suppressed and the films were dominated by Al–N bonding with minor oxygen incorporation, accompanied by the development of a polycrystalline structure. Nanoindentation measurements performed on the 110 nm-thick film yielded a peak hardness of approximately 3.6 GPa, indicating enhanced mechanical durability compared with uncoated silver. Comparative evaluation of color difference, mechanical hardness, tarnish resistance, and environmental durability demonstrated improved performance of the AlN-coated silver. Finally, the practical applicability of the coating was demonstrated by depositing AlN-based films onto large and intricately designed silver jewelry items, indicating compatibility with industrial-scale processing.
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Dual optimization of ZT and output power in bulk Bi2Te3 through metal-assisted chemical etching
(2026-03-01)
Theekhasuk, Nattharika
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Sakulkalavek, Aparporn
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Ono, Takahito
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Sakdanuphab, Rachsak
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Nguyen, Duc Nam
Thermoelectric materials offer a promising route for sustainable energy harvesting by directly converting waste heat into electricity, enabling compact, solid-state, and environmentally friendly energy solutions. Among them, bismuth telluride (Bi₂Te₃) stands out as the benchmark material for near-room-temperature applications due to its excellent electronic transport properties and commercial maturity. However, achieving high-performance in bulk or thick-film Bi₂Te₃ remains a formidable challenge. Conventional strategies such as doping, alloying, and nanoinclusion, while successful in thin films, often fail to translate effectively to bulk systems due to issues like pore collapse, poor uniformity, and degraded electrical connectivity. These limitations hinder the formation of efficient phonon-scattering architectures without compromising charge transport, resulting in limited improvement in the thermoelectric figure of merit (ZT). In this study, we present a novel and scalable nanoengineering strategy that applies metal-assisted chemical etching (MACE) to fabricate nanoporous surface layers on bulk Bi₂Te₃ for the first time. Unlike conventional nanostructuring techniques, MACE enables the formation of oriented nanostructures via a simple wet-chemical process, offering high tunability, low cost, and compatibility with large-area substrates. To reduce interfacial resistance, nickel was subsequently electrodeposited onto the nanostructured surface, forming a conformal contact layer that improves charge extraction and output performance. By systematically tuning the MACE duration, the optimized nanostructured Bi₂Te₃ sample exhibited a 2.3-fold improvement compared to the pristine bulk sample. Furthermore, due to the increased surface area from the nanoporous architecture, the internal resistance and output power of the nanostructured Bi₂Te₃ devices demonstrated 25-fold and 5.8-fold improvments, respectively, relative to the untreated sample. These remarkable improvements are attributed to the synergistic effect of enhanced phonon scattering within the nanoporous layer and improved charge transport enabled by the conformal nickel coating. This work not only introduces a powerful nanostructuring route for Bi₂Te₃ but also establishes a practical platform for high-performance, thick-film thermoelectric devices. The findings offer deep insight into the structure, property, and performance relationships governing thermoelectric efficiency and pave the way toward the scalable fabrication of next-generation thermoelectric modules for real-world applications such as industrial waste heat recovery and self-powered electronics.
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Flexible thermoelectric cooler with optimized fill factor and radiative cooling integration for energy-efficient wearable thermal management
(2025-12-01)
Gobpant, Jakrit
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Sakulkalavek, Aparporn
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Sriniratkul, Pannarai
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Sa-I, Saowanee
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Rudradawong, Chalermpol
The growing demand for skin-interfaced electronics in health monitoring, sports, and personal comfort highlights the need for compact, energy-efficient, and conformable cooling systems. However, existing thermoelectric coolers (TECs) are rigid, bulky, and power-intensive, making them unsuitable for wearable applications. To address this limitation, we present a flexible thermoelectric cooler (FTEC) with a compact footprint of 40 × 40 × 2.26 mm3, featuring discrete p- and n-types thermoelectric leg arrays with systematically varied fill factors (FF = 9 %, 16 %, 25 %, and 36 %). Optimization revealed that the 16 % FF configuration provides the most energy-efficient architecture, achieving a cold-side temperature of −5.9 °C and a coefficient of performance (COP) of 3.25 at 6 W input, while balancing cooling capacity and electrical loss. To improve heat dissipation without increasing bulk, ultrathin graphite and radiative cooling (RC) layers were integrated. Three configurations, including baseline (no thermal layer), graphite-enhanced, and RC-enhanced FTECs, were systematically evaluated. Under ambient conditions (33 °C), the RC- enhanced FTEC maintained a cold-side temperature of approximately 23 °C for 6 h during low-current operation of 0.3 A. Beyond intrinsic performance, the optimized FTEC was benchmarked against both commercial rigid TEC modules and state-of-the-art flexible TECs. Compared to widely used Peltier devices (TEC1–12705 and TEC1–12710), our FTEC achieved comparable ΔT with nearly 65 % lower power consumption, owing to fill factor optimization and RC-enhanced heat rejection. Mechanical flexibility was validated through bending tests, confirming both thermal and electrical stability. Finally, integration with an ESP32-based proportional–integral–derivative (PID) control system enabled real-time wearable cooling, successfully reducing skin temperature from 33 °C to 31 °C in on-body trials. This work demonstrates.
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Tuning the thermoelectric performance of flexible copper selenide thin films through sputtering pressure and hybrid microwave annealing
(2025-10-10)
Khuncharoen, Wasan
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Theekhasuk, Nattharika
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Rudradawong, Chalermpol
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Voraud, Athorn
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Sakdanuphab, Rachsak
Flexible copper selenide (Cu₂₋ₓSe) thin films were deposited on polyimide substrates by direct current magnetron sputtering under varying pressures (0.8–4.0 × 10⁻² mbar) and subsequently annealed using hybrid microwave irradiation at 250 °C for 10–30 min. Increasing sputtering pressure raised the copper content (62.2–63.8 at%) and suppressed the formation of Cu₃Se₂ impurities. Hybrid microwave annealing promoted the transformation to stoichiometric β-Cu₂Se, removed oxide phases such as selenium dioxide and copper oxide, and improved crystallinity, as confirmed by x-ray diffraction and x-ray photoelectron spectroscopy. Field-emission scanning electron microscopy revealed microstructural densification at 10–20 min, whereas 30 min induced cracks and porosity that degraded transport properties. The optimized 20-minute annealed film achieved a peak power factor of 81.5 × 10⁻⁵ W/m·K² at 300 °C—over 130 times higher than that of the as-deposited film and comparable to other flexible Cu₂Se systems. Stability tests confirmed excellent retention after three months of ambient storage. These results establish sputtering pressure control and hybrid microwave annealing as scalable strategies for high-performance, stable Cu₂Se thermoelectric films.
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Flexible thermoelectric generator with radiative cooling for body-heat-driven self-powered Bluetooth low energy sensing system
(2025-10-01)
Gobpant, Jakrit
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Van Toan, Nguyen
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Ono, Takahito
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Tuoi, Truong Thi Kim
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Tran, Ngoc Dang Khoa
Wearable electronics and wireless IoT sensors are increasingly expected to operate in a self-powered manner. However, their practical deployment remains limited due to the lack of compact, flexible, and sustainable energy sources. Thermoelectric generators (TEGs), which convert body heat into electricity, present a promising solution but are typically hindered by small temperature gradients and the requirement of bulky heat sinks that compromise flexibility. To address these challenges, we developed an ultra-thin flexible thermoelectric generator (FTEG) integrated with a radiative cooling (RC) layer that passively enhances heat dissipation under natural convection. The device, fabricated using high-performance thermoelectric materials on a soft silicone substrate, maintained a total thickness of just 2.26 mm. Finite element modeling and experimental validation confirmed that the RC layer effectively increased the temperature gradient across thermoelectric legs, significantly improving the output power compared to conventional graphite-based or no-cooling designs. The FTEG achieved a maximum normalized power density of 3.51 μW/cm2 under temperature conditions representative of wearable use (T<inf>skin</inf> of 32 °C and T<inf>ambient</inf> of 26 °C). The harvested energy was then stored using a power management circuit and capacitor. This stored energy was successfully used to power a Bluetooth Low Energy (BLE) sensing module, enabling stable wireless transmission driven entirely by body heat. These results highlight the practical potential of integrating passive radiative cooling into flexible thermoelectric systems, paving the way for high-performance, battery-free wearable electronics and autonomous IoT applications.
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Optimizing fabrication processes for scalable production of flexible thermoelectric modules: A case study on self-powered IoT systems
(2025-09-01)
Gobpant, Jakrit
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Klongratog, Bhanupol
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Rudradawong, Chalermpol
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Sakdanuphab, Rachsak
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Limsuwan, Pichet
This study explores the optimization of fabrication processes for flexible thermoelectric generators (FTEGs) to enhance their performance and scalability for industrial applications, with a focus on integrating them into self-powered Internet of Things (IoT) systems. The research investigates the impact of silicone layer thickness and applied fabrication pressures on the mechanical stability, energy harvesting efficiency, and power output of FTEGs. Results demonstrate that reducing the thermal conductivity of the silicone filler and optimizing the fabrication pressure significantly improves the performance of FTE modules. The optimized FTEGs, featuring a series-parallel configuration, achieve a power density of 5.2 mW/cm² under a temperature difference of 50 °C, surpassing prior benchmarks. The developed system efficiently harvests waste heat, charges a battery, and powers an IoT module for real-time monitoring of temperature, humidity, and carbon monoxide levels. These findings highlight the potential of FTEGs as a sustainable solution for energy harvesting and self-powered industrial monitoring applications.
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Stability, thermodynamic, electronic, and thermoelectric properties of triclinic Cu2Se structure
(2024-06-01)
Kotmool, Komsilp
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Khammuang, Satchakorn
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Rudradawong, Chalermpol
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Thatsami, Niphat
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Kaewmaraya, Thanayut
The conversion of heat into electricity using the thermoelectric effect is a crucial issue to tackle the ever-increasing global energy consumption. Cu<inf>2</inf>Se is one of the high-performance thermoelectric materials due to its liquid-like atomic structure, which minimizes the phonon-derived thermal conductivity. Nevertheless, the unambiguous atomic structure of the low-temperature phase, α-Cu<inf>2</inf>Se, remains controversial. By employing a combination of theoretical approaches including an evolutionary algorithm for structural searching, density functional theory, and lattice dynamics, the α-Cu<inf>2</inf>Se phase is proposed to crystalize in the dynamically stable triclinic Cu<inf>2</inf>Se structure (s.g. P1) which can be regarded as a monoclinic polymorph (s.g. P2<inf>1</inf>/c†) through slight distortion. The corresponding heat capacity (C<inf>V</inf>) and Debye temperature (Θ<inf>D</inf>) are 0.37 J/g K and 276 K, respectively, indicating low thermal conductivity in the material. The semiconducting P1 phase possesses an indirect gap of 1.0 eV. Additionally, based on the Boltzmann transportation theory, fundamental thermoelectric parameters around the transition temperature (300–500 K) are investigated. Beyond the semiconducting phase, a novel metallic phase identified as the triclinic P1̄ phase is also discovered, exhibiting a two-dimensional (2D) crystal geometry.
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High-performance flexible thermoelectric generator based on silicone rubber and cover with graphite sheet
(2024-01-05)
Gobpant, Jakrit
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Klongratog, Bhanupol
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Rudradawong, Chalermpol
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Sakdanuphab, Rachsak
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Junlabhut, Prasopporn
Harvesting thermal energy through a flexible thermoelectric generator (FTEG) offers an excellent micro-power solution for energizing node sensors in the realm of Internet of Things (IoT) and wearable electronics. Nonetheless, current FTEG suffer from drawbacks including low efficiency, significant thermal resistance, and complex manufacturing procedures. In this study, a high-performance FTEG using silicone rubber was designed and fabricated using a straightforward process. The finite-element method was used to optimize the copper electrode thickness, and the bendable substrate layers with various thermal conductivity were studied for the first time. The copper electrode thickness of 0.1 mm was selected because it offers high flexibility and bendability while still providing a relatively high-power output. The 5 × 5 cm2 FTEG device was fabricated and covered with a bendable substrate. Silicon rubber (0.08 Wm−1K−1), silicon rubber added 5% graphene (0.14 Wm−1K−1), and graphite sheets (15 Wm−1K−1) were used as bendable substrates. The FTEG cover with graphite sheets has a maximum output voltage of 1.1 V under a temperature difference (ΔT) at 65 °C. Its maximum output power is 162.4 mW, corresponding to a power density of 6499.1 µW/cm2 under the same above ΔT. The experimental findings indicated that integrating a bendable substrate with high thermal conductivity and electrical insulation properties enhances the performance of the FTEG.

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