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Author: search.filters.author.Rujanapich, PoopolSubject: search.filters.subject.Generation lifetime

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    Effect of X-ray irradiation on the current of P-N diode
    (2011-01-01)
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Rujanapich, Poopol
    ;
    Poyai, Amporn
    ;
    Niemcharoen, Surasak
    An effect induced by x-ray irradiation on Boron-doped crystalline Si at room temperature was closely investigated in this paper. Irradiation of X-ray energy of 40, 55 and 70keV has been performed on P-N junction diodes fabricated at Thai Microelectronics Center. Minority carrier life time of the device has been calculated before and after irradiation for comparison. The results show no significant change on the value between exposed and unexposed device. Therefore, any permanent lattice modified or any defects caused by X-ray in the device bulk seem to be unconfirmed in this range of energy. However, from this study, X-ray irradiation still effects on electrical characteristics of the diodes. Current-voltage (I-V) measurement has been carried out to study characteristic variation of the device. Biasing of the device was performed from -10 to 1 V and, after the exposure, the leakage current was obviously decreased by 25% and forward current was dramatically increased by 3 order of magnitude related to increment of X-ray energy. © (2011) Trans Tech Publications.
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    Generation lifetime analysis of p-n junction x-ray detector
    (2010-07-30)
    Rujanapich, Poopol
    ;
    Poyai, Amporn
    ;
    Srithanachai, Itsara
    ;
    Pengpad, Putapon
    ;
    Hruanan, Charndet
    Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4 and 150 second at 40, 55 as well as 70 keV were conducted in this paper. The 1 mm<sup>2</sup> p-n junctions were fabricated by boron implantation process into phosphorus doped silicon wafer. A commercial x-ray source for dentist was used to generate x-ray in these experiments. The carrier generation lifetime was calculated from current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The results show that the carrier generation lifetime increased after 4 second of x-ray irradiation at all three energy conditions but decreased back close to the original value after continue exposed devices for another 150 second. However, the lowest point of the generation lifetime after 4 second of x-ray irradiation is depending on the level of energy used. The results also presented that the defects that caused by x-ray irradiation are manageable.