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Author: search.filters.author.Sae-Ngow, S.

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    A low-voltage, wide dynamic range CMOS floating active inductor
    (2003-12-01)
    Sae-Ngow, S.
    ;
    Thanachayanont, A.
    This paper presents a novel low-voltage wide dynamic range high frequency floating active inductor in a 0.35-μm CMOS technology. The proposed circuit exhibits 52-dB spurious-free dynamic range while dissipation 2 mW from a single 1.5 V power supply voltage. Using the proposed inductor, a 4<sup>th</sup>-order bandpass filter was designed at 2-GHz center frequency and achieve Q of 25 with input-referred IP3 of -14 dBV.
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    Inductorless RF amplifier with tuneable band-selection and image rejection
    (2003-07-14)
    Thanachayanont, A.
    ;
    Sae-Ngow, S.
    This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, low-noise amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the source-degeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-μm CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.
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    CMOS RF amplifier with tuneable band-selection and image rejection
    (2003-01-01)
    Thanachayanont, A.
    ;
    Sae-Ngow, S.
    This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, lownojse amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the sourcedegeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-u.m CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.
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    A ± 1 VOLT VERY HIGH FREQUENCY CLASS AB CMOS ACTIVE INDUCTOR
    (2003-01-01)
    Sae-Ngow, S.
    ;
    Thanachayanont, A.
    This paper presents a new VHF class AB CMOS active inductor suitable for low voltage operation. The proposed circuit is simulated by using HSPICE with parameters from a 0.35-μm CMOS technology. The active inductor exhibits a maximum self-resonance at 3.3-GHz and 55-dB spurious-free dynamic range while dissipation 1.25mW from a ± IV power supply voltage.