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Author: search.filters.author.Saenlamool, MontreeSubject: search.filters.subject.Electric field crowding

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    An improvement of the breakdown voltage characteristics of NPT-TIGBT by using a P-buried layer
    (2013-08-30)
    Manosukritkul, Phasapon
    ;
    Kerdpardist, Amonrat
    ;
    Saenlamool, Montree
    ;
    Chaowicharat, Ekalak
    ;
    Poyai, Amporn
    In this paper, we introduced a P-buried (P<inf>b</inf>) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The P<inf>b</inf> layer, with carrier concentration of 5 ×10<sup>16</sup> cm<sup>-3</sup>, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT. © (2013) Trans Tech Publications, Switzerland.