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Item type:Publication, Porous Electrospun Carbon Nanofibers Bearing TiO2 Hollow Nanospheres for Supercapacitor Electrodes(2024-03-22) ;Wongprasod, Suchunya ;Tanapongpisit, Nantawat ;Laohana, Peerawat ;Huyen Nguyen, Thi MyVan, Hoang QuyA facile fabrication method was introduced to enhance the specific surface area and porosity of the carbon nanofibers. The carbon nanofibers bearing TiO<inf>2</inf> hollow nanosphere electrodes were synthesized using an electrospinning technique followed by heat treatment. Varying amounts of as-prepared TiO<inf>2</inf> hollow nanospheres were incorporated into the polymer precursor to examine their impact on the electrode enhancement. The electrochemical performance of supercapacitor electrodes composed of carbon nanofibers bearing TiO<inf>2</inf> hollow nanospheres was investigated. Results revealed that the specific capacitance of the bare carbon nanofibers electrode (170 F g<sup>-1</sup> at a current density of 0.5 A g<sup>-1</sup>) was significantly improved upon when embedded with 5 wt % TiO<inf>2</inf> hollow nanospheres of 191 F g<sup>-1</sup>. Additionally, the carbon nanofibers bearing 5 wt % TiO<inf>2</inf> hollow nanosphere electrodes demonstrated excellent cycling stability, retaining 97% of its initial specific capacitance even after 10000 cycles. Additionally, the electrochemical performance of asymmetric supercapacitors from these electrodes was also demonstrated. These findings highlight the ability of as-prepared TiO<inf>2</inf> hollow nanospheres to improve the efficiency of the carbon nanofibers electrode due to the optimum porosity to the amount of TiO<inf>2</inf> hollow nanospheres in the carbon nanofibers, opening up possibilities for the development of high-performance supercapacitors. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors(2022-10-01) ;Srikam, Saranisorn ;Traiwattanapong, Worawat ;Limsuwan, PichetChaisakul, PapichayaWe report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 μm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects.
