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Author: search.filters.author.Supadech, S.Subject: search.filters.subject.Mo/n-Si/Mo

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    Item type:Publication,
    Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region
    (2003-08-01)
    Masui, T.
    ;
    Khunkhao, S.
    ;
    Kobayashi, K.
    ;
    Niemcharoen, S.
    ;
    Supadech, S.
    We previously reported that it is possible to achieve bias-controllable photocurrent characteristics using planar metal-semiconductor-metal (MSM) structures with depleted and undepleted regions at the active area under optical illumination. To make the structures of this type more sensitive to dc and/or ac optical quantities, interdigitated Schottky-barrier MSM (SB-MSM) structures for visible range having voltage-controllable iris function have been fabricated and examined. By introducing an undepleted region between Schottky barriers on both sides, the depleted region width at the front surface under illumination varies with bias applied, where this region would be more sensitive to optical quantity than the undepleted region to generate the photocurrent. Making use of planar molybdenum n-type silicon molybdenum (Mo/n-Si/Mo) structures, it has been experimentally demonstrated that such a structure exhibits voltage controllability of photocurrents whilst maintaining the inherent function converting optical signal into electronic signal. An appreciable improvement in obtaining output photocurrent was confirmed from both dc and low frequency (1-20) kHz signal measurements. It was found that the experimental results are substantially explained by the simplified model of this structure. © 2003 Elsevier Science Ltd. All rights reserved.
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    Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region
    (2002-04-01)
    Niemcharoen, S.
    ;
    Ando, T.
    ;
    Supadech, S.
    ;
    Yasumura, Y.
    ;
    Sato, K.
    Measurements of low frequency shot noise due to photoinduced currents have been carried out on planar molybdenum/n-type silicon/molybdenum structures having long neutral region and Schottky barriers at both ends. Measurements were performed in the frequency range between 1 and 200 kHz at room temperature. The observed shot noise was found to be lower than the level of full shot noise. That is, when the current noise is expressed as S(ω) = 2qIΓ<sup>2</sup> (q, the electronic charge; I, the average current), the noise factor, Γ<sup>2</sup>, was estimated to be around 0.9, which is smaller than unity corresponding to so-called full shot noise. These results are attributed to the decay of autocorrelation effect in the current component photoinduced in the neutral region. © 2002 Elsevier Science Ltd. All rights reserved.