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Author: search.filters.author.Thedsakhulwong, AmornSubject: search.filters.subject.V2O5 thin film

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    Influence of the rf power and oxygen content on structural, electrical, and optical properties of V2O5 thin films prepared via reactive radio frequency sputtering
    (2022-07-01)
    Khlayboonme, S. Tipawan
    ;
    Thedsakhulwong, Amorn
    Herein, V<inf>2</inf>O<inf>5</inf> thin films were deposited through O<inf>2</inf>-reactive radio frequency (RF) magnetron sputtering using a metallic vanadium arget without external heating on a glass substrate. The influence of the RF power and O<inf>2</inf> content on phase formation was investigated, and the percentage of the phase volume was related to the electrical and optical properties of the films. These films were composed of a mixture of α and β phases of V<inf>2</inf>O<inf>5</inf>, and the coexistence of monoclinic (βм) and tetragonal (βт) symmetries of the β-phase structure was observed. The phase of the film deposited at 100 W RF power with 10% O<inf>2</inf> was βт. Increasing the RF power to 150 W led to the development of the βм phase in the film. At 200 W, the obtained film was a mixture of βм- and α-V<inf>2</inf>O<inf>5</inf> phases, and the film produced with an O<inf>2</inf> content of more than 10% was a mixture of three phases: βт-, βм-, and α-V<inf>2</inf>O<inf>5</inf>. Further increase in the O<inf>2</inf> content decreased the βм-phase volume but increased the βт-phase volume. The electrical resistivity and optical properties depended on the phase volume. Furthermore, the relationship between the phase volume and film properties is presented.