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Author: search.filters.author.Theekhasuk, NattharikaSubject: search.filters.subject.Antimony telluride

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    Item type:Publication,
    Enhanced antimony telluride thermoelectric generators: From material synthesis to device applications
    (2025-12-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Voraud, Athorn
    ;
    Limsuwan, Pichet
    ;
    Sakulkalavek, Aparporn
    This study investigates the effect of Bi₄O₄SeCl₂ (BOSC) addition (0–4 wt%) on the thermoelectric performance of p-type Bi₀.₅Sb₁.₅Te₃ synthesized via high-energy ball milling. XRD analysis revealed lattice incorporation at 1 wt% BOSC, while higher concentrations led to phase separation. The 1 wt% BOSC sample exhibited a significantly reduced total thermal conductivity of 0.28 W/m·K, compared to 0.46 W/m·K in the undoped sample, attributed to enhanced phonon scattering. Despite moderate decreases in electrical conductivity and Seebeck coefficient, a peak ZT of 1.02 at 50 °C was achieved—representing a ∼54 % improvement over the undoped material. Furthermore, a prototype thermoelectric module fabricated with BOSC-doped legs produced a power density of 17.6 mW/cm² under a 150 °C temperature gradient. These results demonstrate that BOSC is an effective additive for reducing thermal conductivity and enhancing overall thermoelectric performance, offering potential for energy harvesting applications at moderate temperatures.
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    Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
    (2021-11-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Nuthongkum, Pilaipon
    ;
    Pluengphon, Prayoonsak
    ;
    Harnwunggmoung, Adul
    Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10<sup>−3</sup> W/mK<sup>2</sup> at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.