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Author: search.filters.author.Thiwawong, ThutiyapornSubject: search.filters.subject.Composite

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    Electrical properties of bistable device based on graphene oxide composited with polyvinylpyrrolidone thin films
    (2021-01-01)
    Thiwawong, Thutiyaporn
    ;
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Tunhoo, Benchapol
    This research studied the bistable properties of synthesized graphene oxide (GO) composited with polyvinylpyrrolidone (PVP). The devices were fabricated using a spin coating process on indium tin oxide (ITO)/glass substrate, and the top electrodes were prepared by thermal evaporation with the device structure of ITO/PVP:GO/Al. The PVP:GO films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, X-ray photoemission spectroscopy, and scanning electron microscopy. The current-voltage (I-V) characteristics of the fabricated device exhibited a maximum ON/OFF current ratio in the order of about 10<sup>4</sup> at a GO concentration of 4 wt%. The mechanism was explained by fitting with the results of the I-V measurement. Moreover, the retention test of the device was more than 2×10<sup>4</sup> s. The device showed the important characteristics of memory to be a candidate for data storage.
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    Flexible and fully transparent WORM memory devices based on Ag nanoparticles blended with poly(ethylene-co-vinyl acetate)
    (2019-12-01)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Silver nanoparticles (Ag NPs) blended with poly(ethylene-co-vinyl acetate) (EVA) were used as an active layer to fabricate flexible and fully transparent memory devices by using the spin-coating method followed by the thermal roll lamination technique with the structure of ITO/EVA:Ag NPs/ITO. The devices exhibited a non-volatile write-once-read-many-times (WORM) memory type and possessed current bi-stability with ON/OFF current ratio within the range of 10<sup>4</sup>-10<sup>5</sup> at a reading voltage of +1 V. The data continuous read operations reached more than 10 h, which revealed the stability of the memory devices over a long period of time. The conduction mechanisms of the memory device could be explained by theoretical models and proposed by electron trapping at the trapping center of Ag NPs inside the EVA matrix. In addition, the memory device showed a fast response of 231 ns and was fully transparent with maximum transmittance of the device at 83.2%. Further, the devices could be operated under the bending condition of more than 0.83% strain.