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Author: search.filters.author.Thiwawong, ThutiyapornSubject: search.filters.subject.PVK

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    Influence of Phase Structure of TiO2 Nanoparticles on Resistive Switching Devices
    (2024-01-03)
    Tunhoo, Benchapol
    ;
    Chantarawong, Direklit
    ;
    Thiwawong, Thutiyaporn
    ;
    Onlaor, Korakot
    In this work, the electrical memory properties of a bi-stable device based on the structure of aluminum/poly (9-vinyl carbazole) (PVK): TiO<inf>2</inf> NPs/indium-tin-oxide (ITO) were reported. The effects of the modified phase structural of titanium dioxide nanoparticles (TiO<inf>2</inf> NPs) on the electrical memory characteristics were determined. The TiO<inf>2</inf> NPs were annealed at different annealing temperatures. The physical properties of the annealed TiO<inf>2</inf> NPs were characterized by transmission electron microscope and X-ray diffraction, which revealed the composition and structure of the anatase and rutile phases. Current-voltage measurements showed that the bi-stable characteristics were affected by the phase structure of the TiO<inf>2</inf> NPs. The ON/OFF current ratio of the fabricated device was noted to be approximately 2.06×10<sup>5</sup> in the case of TiO<inf>2</inf> NPs annealed at 500°C. A theoretical model was used to explain the charge injection mechanisms of the device. Moreover, the temperature dependence and retention-time measurements of the device were demonstrated.
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    Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure
    (2018-01-25)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Multilevel conductance switching was achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al. The current-voltage (I-V) curves of the memory devices at low reading voltages showed three distinguished states of current. The memory devices exhibited non-volatile rewritable memory characteristics. The carrier transport mechanisms of the devices in each state were analyzed by theoretical models based on the experimental I-V data. In addition, retention time measurements showed clearly three current states with good data retention properties. From the retention times test, the average values of ON/OFF, ON/intermediate (INTERM) and INTERM/OFF current ratios of the memory devices were 1.7 × 10<sup>6</sup>, 3.5 × 10<sup>2</sup> and 5.0 × 10<sup>3</sup>, respectively.