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Author: search.filters.author.Traiwattanapong, WorawatSubject: search.filters.subject.Waveguide

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    FDTD Investigation of Efficient and Robust Integration Between Si3N4and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators
    (2023-01-01)
    Khongpetch, Natdanai
    ;
    Traiwattanapong, Worawat
    ;
    Chiangga, Surasak
    ;
    Limsuwan, Pichet
    ;
    Chaisakul, Papichaya
    Si3N4 photonic integrated circuits have gain significant and rapid interest in different photonic applications thanks to its superior passive performance. Nevertheless, optical integration between Si3N4 and Ge-based optical components remains critically challenging especially for optical modulation. In this paper, via 3D-FDTD calculations we investigate the optical integration between Si3N4 and Ge-based waveguides using vertical coupling configuration employing amorphous Si (α-Si) as an optical bridge showing efficient and robust coupling efficiency, which can be maintained according to the tolerant analysis with respect to the variations in optical wavelengths and critical parameters of the coupling structure. In addition, with respect to the recent theoretically-optimized SOI waveguide-integrated and also laterally-coupled Si3N4 waveguide-integrated Ge-based optical modulators, we found that the studied coupling structure could be employed to enable a low-voltage Si3N4 waveguide-integrated Ge-based optical modulator with a competitive extinction ratio/insertion loss performance, increasing the prospect of Si3N4-based photonic integrated circuits for low-energy optical interconnects.
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    An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors
    (2022-10-01)
    Srikam, Saranisorn
    ;
    Traiwattanapong, Worawat
    ;
    Limsuwan, Pichet
    ;
    Chaisakul, Papichaya
    We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 μm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects.