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Author: search.filters.author.Tubtimtae, AuttasitSubject: search.filters.subject.Thin film

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    Post-annealing effects on the structural and optical properties of nickel vanadate thin films.
    (2026-05-15)
    Nedkun, Piyanooch
    ;
    Sangsai, Phannita
    ;
    Wongrat, Ekasiddh
    ;
    Chaiworn, Panupat
    ;
    Tubtimtae, Auttasit
    Abstract This research gap is to understand the post-annealing-temperature-dependent structural transition and defect-mediated optical tuning in NiV₂O₆ thin films deposited using a spin-coating technique. By systematically correlating phase evolution, oxygen vacancy formation, and band gap modulation. The as-prepared thin films were annealed at 200 °C, 300 °C, 400 °C, and 500 °C. The annealing temperature of 400 °C was found for an amorphous structure with the band gap of 2.38 eV, which within an appropriate band gap of ∼ 2.3–2.6 eV for photoelectrochemical and electrochromic applications. Tuning of improved crystallinity with structural rearrangement and a lower band gap of 2.10 eV were obtained at 500 °C, which induced the diffusion of oxygen atoms and led to the formation of oxygen vacancies. This provides a clear processing–structure–optical property correlation and offers a simple-thermal route for band gap engineering without additional doping for enhancing the optical efficiency in solar absorber, optoelectronic, and photonic applications, particularly in broadband optical devices.
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    Structural, optical, and electrical properties via two simple routes for the synthesis of multi-phase potassium antimony oxide thin films
    (2022-07-15)
    Homcheunjit, Ratchaneekorn
    ;
    Pluengphon, Prayoonsak
    ;
    Tubtimtae, Auttasit
    ;
    Teesetsopon, Pichanan
    Multi-phase ternary oxide glass thin films of potassium antimony oxide were synthesized via dip coating (DC) and spray pyrolysis (SP) methods. The growth of thin film was conducted on a non-conductive borosilicate glass substrate. Surface morphology was investigated and showed different characteristics. X-ray diffraction (XRD) analysis revealed the peaks corresponded to the monoclinic KSb<inf>3</inf>O<inf>5</inf> and K<inf>2</inf>Sb<inf>4</inf>O<inf>11</inf> phases. The structural parameter analysis shows that the lower values of micro strain (ε), dislocation density (δ), and stacking fault probability (SF) with higher number (N) of particle in the multi-phase thin film for the spray pyrolysis method confirm slightly larger crystallite size, less crystal imperfection, and less structural disorder. The lower average transmission, absorption, and extinction coefficients resulted to higher refractive index, permittivity, and electrical susceptibility for the sample synthesized by a spray pyrolysis method. In addition, the average energy band gap values (E<inf>g</inf>) of 3.57 and 3.60 eV were obtained for the dip coating and spray pyrolysis methods, respectively. However, the lower R<inf>s</inf> (14.69 × 10<sup>7</sup> Ω/sq.) with higher σ<inf>h</inf> (85.09 S/cm) and the FOM<inf>(H-HR)</inf> (0.183 Ω<sup>-1</sup>) of the multi-phase K–Sb–O thin film for the dip coating method were obtained may be due to more interconnections generated at the interface and there are less residual on the surface of thin film.