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Author: search.filters.author.Tunhoo, BenchapolSubject: search.filters.subject.PVK

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    Influence of Phase Structure of TiO2 Nanoparticles on Resistive Switching Devices
    (2024-01-03)
    Tunhoo, Benchapol
    ;
    Chantarawong, Direklit
    ;
    Thiwawong, Thutiyaporn
    ;
    Onlaor, Korakot
    In this work, the electrical memory properties of a bi-stable device based on the structure of aluminum/poly (9-vinyl carbazole) (PVK): TiO<inf>2</inf> NPs/indium-tin-oxide (ITO) were reported. The effects of the modified phase structural of titanium dioxide nanoparticles (TiO<inf>2</inf> NPs) on the electrical memory characteristics were determined. The TiO<inf>2</inf> NPs were annealed at different annealing temperatures. The physical properties of the annealed TiO<inf>2</inf> NPs were characterized by transmission electron microscope and X-ray diffraction, which revealed the composition and structure of the anatase and rutile phases. Current-voltage measurements showed that the bi-stable characteristics were affected by the phase structure of the TiO<inf>2</inf> NPs. The ON/OFF current ratio of the fabricated device was noted to be approximately 2.06×10<sup>5</sup> in the case of TiO<inf>2</inf> NPs annealed at 500°C. A theoretical model was used to explain the charge injection mechanisms of the device. Moreover, the temperature dependence and retention-time measurements of the device were demonstrated.
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    Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure
    (2018-01-25)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Multilevel conductance switching was achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al. The current-voltage (I-V) curves of the memory devices at low reading voltages showed three distinguished states of current. The memory devices exhibited non-volatile rewritable memory characteristics. The carrier transport mechanisms of the devices in each state were analyzed by theoretical models based on the experimental I-V data. In addition, retention time measurements showed clearly three current states with good data retention properties. From the retention times test, the average values of ON/OFF, ON/intermediate (INTERM) and INTERM/OFF current ratios of the memory devices were 1.7 × 10<sup>6</sup>, 3.5 × 10<sup>2</sup> and 5.0 × 10<sup>3</sup>, respectively.
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    Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures
    (2016-10-01)
    Onlaor, Korakot
    ;
    Chaithanatkun, Natpasit
    ;
    Tunhoo, Benchapol
    We reported on the influence of the structural properties of zinc oxide nanoparticles (ZnO NPs) on electrical bi-stable device based on an aluminum/poly(9-vinylcarbazole):ZnO NPs/indium-tin oxide structure. ZnO NPs were synthesized by simple precipitation method with different annealing temperatures. When annealing temperature was increased, the ZnO NPs crystallite increased and the ZnO NPs gradually changed shape from nanostar-like to nanospherical. The structural parameters, such as the crystallite size of ZnO NPs and dislocation density, can be calculated from the XRD spectra. The effect of ZnO NPs annealing temperature on memory properties can be measured by current-voltage characteristics and retention time measurements. The maximum ON/OFF current ratio for the memory devices was about 10<sup>3</sup> and the devices exhibited the Write-Once, Read-Many (WORM) memory type. The operating mechanisms of the memory device were analyzed using theoretical models, in which electrons trapping in the ZnO NPs and electrons tunneling among a PVK matrix by direct tunneling process were discussed.